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Title: Method for fabricating hafnia films

Patent ·
OSTI ID:913434

The present invention comprises a method for fabricating hafnia film comprising the steps of providing a substrate having a surface that allows formation of a self-assembled monolayer thereon via covalent bonding; providing an aqueous solution that provides homogeneous hafnium ionic complexes and hafnium nanoclusters wherein the aqueous solution is capable of undergoing homogeneous precipitation under controlled conditions for a desired period of time at a controlled temperature and controlled solution acidity for desired nanocluster nucleation and growth kinetics, desired nanocluster size, desired growth rate of film thickness and desired film surface characteristics. The method further comprising forming the self-assembled monolayer on the surface of the substrate wherein the self-assembled monolayer comprises a plurality of hydrocarbon chains cross-linked together along the surface of the substrate, the hydrocarbon chains being uniformly spaced from one another and wherein each of the hydrocarbon chains having a functional anchoring group at a first end of the chain covalently bonded with the surface of the substrate and each of the hydrocarbon chains having a functional terminating group projected away from the surface wherein the functional terminating group provides a bonding site for the hafnium film to grow; and exposing the substrate to the aqueous solution for a desired period of time at a controlled temperature wherein the hafnium ionic complexes and the hafnium nanoclusters are deposited on the bonding site of the functional terminating group thereby forming the hafnia film wherein the hafnium bonded to the hydrocarbons and to one another provide a uniform ordered arrangement defined by the uniform arrangement of the hydrocarbons.

Research Organization:
Oak Ridge National Laboratory (ORNL), Oak Ridge, TN (United States)
Sponsoring Organization:
USDOE
DOE Contract Number:
AC05-00OR22725
Assignee:
UT-Battelle, LLC (Oak Ridge, TN)
Patent Number(s):
7,258,745
Application Number:
10/913,896
OSTI ID:
913434
Country of Publication:
United States
Language:
English

References (19)

Titanium Oxide Thin Films on Organic Interfaces through Biomimetic Processing journal February 1998
Self-assembled monolayers: Recent developments and applications journal February 1996
Characterization of hafnium anodic oxide films: An AC impedance investigation journal May 1995
Monolayer transformation by nucleophilic substitution: Applications to the creation of new monolayer assemblies journal November 1990
Golden interfaces: The Surface of Self-Assembled Monolayers journal September 1996
Preparation of TiO2 films on self-assembled monolayers by sol–gel method journal March 1998
Characterization of hafnium oxide films modified by Pt doping journal November 1995
Tailoring the dielectric properties of HfO 2 –Ta 2 O 5 nanolaminates journal June 1996
Deposition mechanism of oxide thin films on self-assembled organic monolayers11Paper presented at Sympos. Synergistic Synthesis of Inororganic Materials, March 1996, Schloß Ringberg, Germany journal January 1998
Formation and Structure of Self-Assembled Monolayers journal January 1996
Physical characterization of hafnium oxide thin films and their application as gas sensing devices journal November 1998
Deposition of optical coatings by pulsed laser ablation journal April 1996
The deposition of TiO 2 thin films on self-assembly monolayers studied by X-ray photoelectron spectroscopy journal January 1998
Optical properties of hafnia and coevaporated hafnia:magnesium fluoride thin films journal January 1996
Synthesis of Oxide and Non-oxide Inorganic Materials at Organic Surfaces book April 1999
Synthesis of ZrO2 and Y2O3-Doped ZrO2 Thin Films Using Self-Assembled Monolayers journal December 1997
Ellipsometric investigation of anodic hafnium oxide films journal January 1997
Reactive evaporation of low-defect density hafnia journal January 1993
Spin‐dependent tunneling in HfO 2 tunnel junctions journal October 1996

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