Low temperature production of large-grain polycrystalline semiconductors

Naseem, Hameed A; Albarghouti, Marwan

Title: Low temperature production of large-grain polycrystalline semiconductors

Patent · Tue Apr 10 00:00:00 EDT 2007

OSTI ID:908831

Naseem, Hameed A ^[1]; Albarghouti, Marwan ^[2]

Fayetteville, AR
Loudonville, NY

An oxide or nitride layer is provided on an amorphous semiconductor layer prior to performing metal-induced crystallization of the semiconductor layer. The oxide or nitride layer facilitates conversion of the amorphous material into large grain polycrystalline material. Hence, a native silicon dioxide layer provided on hydrogenated amorphous silicon (a-Si:H), followed by deposited Al permits induced crystallization at temperatures far below the solid phase crystallization temperature of a-Si. Solar cells and thin film transistors can be prepared using this method.

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Research Organization:: DOE/EPSCOR

Sponsoring Organization:: USDOE

DOE Contract Number:: 0402-03027-21-0000

Assignee:: The Board of Trustees of the University of Arkansas (Little Rock, AR)

Patent Number(s):: 7,202,143

Application Number:: 10/972,760

OSTI ID:: 908831

Country of Publication:: United States

Language:: English

References (16)

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