Metal-inducd assembly of a semiconductor-island lattice: Getruncated pyramids on Au-patterned Si

Journal Article · Sun Aug 28 00:00:00 EDT 2005 · Nano Letters

DOI:https://doi.org/10.1021/nl051719d· OSTI ID:885245

Robinson, J T; Liddle, J A; Minor, A; Radmilovic, V; Yi, D O; Greaney, P A; Long, K N; Chrzan, D C; Dubon, O D

We report the two-dimensional alignment of semiconductor islands using rudimentary metal patterning to control nucleation and growth. In the Ge on Si system, a square array of sub-micron Au dots on the Si (001) surface induces the assembly of deposited Ge adatoms into an extensive island lattice. Remarkably, these highly ordered Ge islands form between the patterned Au dots and are characterized by a unique truncated pyramidal shape. A model based on patterned diffusion barriers explains the observed ordering and establishes general criteria for the broader applicability of such a directed assembly process to quantum dot ordering.

• Research Organization: Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States)
• Sponsoring Organization: USDOE Director. Office of Science. Office of Basic EnergySciences
• DOE Contract Number: DE-AC02-05CH11231
• OSTI ID: 885245
• Report Number(s): LBNL-58967; R&D Project: 513390; BnR: KC0201030; TRN: US200616%%463
• Journal Information: Nano Letters, Vol. 5, Issue 10; Related Information: Journal Publication Date: Oct. 2005
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
ALIGNMENT
DIFFUSION BARRIERS
NUCLEATION
QUANTUM DOTS
SHAPE