III-V Growth on Silicon Toward a Multijunction Cell

Conference · Tue Nov 01 00:00:00 EST 2005

OSTI ID:882823

Geisz, J; Olson, J; McMahon, W; Friedman, D; Kibbler, A; Kramer, C; Young, M; Duda, A; Ward, S; Ptak, A; Kurtz, S; Wanlass, M; Ahrenkiel, P; Jiang, C S; Moutinho, H; Norman, A; Jones, K; Romero, M; Reedy, B

A III-V on Si multijunction solar cell promises high efficiency at relatively low cost. The challenges to epitaxial growth of high-quality III-Vs on Si, though, are extensive. Lattice-matched (LM) dilute-nitride GaNPAs solar cells have been grown on Si, but their performance is limited by defects related to the nitrogen. Advances in the growth of lattice-mismatched (LMM) materials make more traditional III-Vs, such as GaInP and GaAsP, very attractive for use in multijunction solar cells on silicon.

• Research Organization: National Renewable Energy Lab. (NREL), Golden, CO (United States)
• Sponsoring Organization: USDOE
• DOE Contract Number: AC36-99-GO10337
• OSTI ID: 882823
• Report Number(s): NREL/CP-520-38996
• Resource Relation: Related Information: Presented at the 2005 DOE Solar Energy Technologies Program Review Meeting held November 7-10, 2005 in Denver, Colorado. Also included in the proceedings available on CD-ROM (DOE/GO-1020060-2245; NREL/CD-520-38577)
• Country of Publication: United States
• Language: English

Related Subjects

14 SOLAR ENERGY
36 MATERIALS SCIENCE
PHOTOVOLTAICS
SOLAR
SILICON
MULTI-JUNCTION CELL
PV
NREL
Solar Energy - Photovoltaics