Semiconductor radiation detector

Patent · Tue Jan 01 00:00:00 EST 2002

OSTI ID:874763

Patt, Bradley E ^[1]; Iwanczyk, Jan S ^[2]; Tull, Carolyn R ^[3]; Vilkelis, Gintas ^[4]

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1. Sherman Oaks, CA
2. Los Angeles, CA
3. Orinda, CA
4. Westlake Village, CA

A semiconductor radiation detector is provided to detect x-ray and light photons. The entrance electrode is segmented by using variable doping concentrations. Further, the entrance electrode is physically segmented by inserting n+ regions between p+ regions. The p+ regions and the n+ regions are individually biased. The detector elements can be used in an array, and the p+ regions and the n+ regions can be biased by applying potential at a single point. The back side of the semiconductor radiation detector has an n+ anode for collecting created charges and a number of p+ cathodes. Biased n+ inserts can be placed between the p+ cathodes, and an internal resistor divider can be used to bias the n+ inserts as well as the p+ cathodes. A polysilicon spiral guard can be implemented surrounding the active area of the entrance electrode or surrounding an array of entrance electrodes.

• Research Organization: Photon Imaging, Inc., Northridge, CA
• DOE Contract Number: FG03-97ER82450
• Assignee: Photon Imaging, Inc. (Northridge, CA)
• Patent Number(s): US 6455858
• OSTI ID: 874763
• Country of Publication: United States
• Language: English

Related Subjects

semiconductor
radiation
detector
provided
detect
x-ray
light
photons
entrance
electrode
segmented
variable
doping
concentrations
physically
inserting
regions
individually
biased
elements
array
applying
potential
single
anode
collecting
created
charges
cathodes
inserts
placed
internal
resistor
divider
bias
polysilicon
spiral
guard
implemented
surrounding
active
electrodes
radiation detector
detector element
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