Photovoltaic devices comprising zinc stannate buffer layer and method for making

Patent · Mon Jan 01 00:00:00 EST 2001

OSTI ID:873475

Wu, Xuanzhi ^[1]; Sheldon, Peter ^[2]; Coutts, Timothy J ^[2]

---

1. Golden, CO
2. Lakewood, CO

A photovoltaic device has a buffer layer zinc stannate Zn.sub.2 SnO.sub.4 disposed between the semiconductor junction structure and the transparent conducting oxide (TCO) layer to prevent formation of localized junctions with the TCO through a thin window semiconductor layer, to prevent shunting through etched grain boundaries of semiconductors, and to relieve stresses and improve adhesion between these layers.

• Research Organization: Midwest Research Institute, Kansas City, MO (United States)
• DOE Contract Number: AC36-83CH10093
• Assignee: Midwest Research Institute (Kansas City, MO)
• Patent Number(s): US 6169246
• OSTI ID: 873475
• Country of Publication: United States
• Language: English

Related Subjects

photovoltaic
devices
comprising
zinc
stannate
buffer
layer
method
device
zn
sno
disposed
semiconductor
junction
structure
transparent
conducting
oxide
tco
prevent
formation
localized
junctions
window
shunting
etched
grain
boundaries
semiconductors
relieve
stresses
improve
adhesion
layers
conducting oxide
photovoltaic devices
buffer layer
grain boundaries
photovoltaic device
semiconductor layer
zinc stannate
semiconductor junction
devices comprising
transparent conducting
comprising zinc
prevent formation
etched grain
/136/438/