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Title: Monolithic pattern-sensitive detector

Patent ·
OSTI ID:873298
 [1]
  1. Livermore, CA
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Extreme ultraviolet light (EUV) is detected using a precisely defined reference pattern formed over a shallow junction photodiode. The reference pattern is formed in an EUV absorber preferably comprising nickel or other material having EUV- and other spectral region attenuating characteristics. An EUV-transmissive energy filter is disposed between a passivation oxide layer of the photodiode and the EUV transmissive energy filter. The device is monolithically formed to provide robustness and compactness.

Research Organization:
Sandia National Laboratories (SNL), Albuquerque, NM, and Livermore, CA (United States)
DOE Contract Number:
AC04-94AL85000
Assignee:
E.U.V., L.L.C. (Livermore, CA)
Patent Number(s):
US 6130431
OSTI ID:
873298
Country of Publication:
United States
Language:
English

References (2)

Stable silicon photodiodes for absolute intensity measurements in the VUV and soft X-ray regions journal May 1996
Normal incidence spectrophotometer with high-density transmission grating technology and high-efficiency silicon photodiodes for absolute solar extreme-ultraviolet irradiance measuremen journal January 1993

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monolithic
pattern-sensitive
detector
extreme
ultraviolet
light
euv
detected
precisely
defined
reference
pattern
formed
shallow
junction
photodiode
absorber
preferably
comprising
nickel
material
euv-
spectral
region
attenuating
characteristics
euv-transmissive
energy
filter
disposed
passivation
oxide
layer
transmissive
device
monolithically
provide
robustness
compactness
preferably comprising
ultraviolet light
extreme ultraviolet
oxide layer
sensitive detector
comprising nickel
spectral region
pattern formed
shallow junction
reference pattern
violet light
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