Method to improve commercial bonded SOI material

Patent · Tue Jul 11 00:00:00 EDT 2000

OSTI ID:873087

Maris, Humphrey John ^[1]; Sadana, Devendra Kumar ^[2]

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1. Barrington, RI
2. Pleasantville, NY

A method of improving the bonding characteristics of a previously bonded silicon on insulator (SOI) structure is provided. The improvement in the bonding characteristics is achieved in the present invention by, optionally, forming an oxide cap layer on the silicon surface of the bonded SOI structure and then annealing either the uncapped or oxide capped structure in a slightly oxidizing ambient at temperatures greater than 1200.degree. C. Also provided herein is a method for detecting the bonding characteristics of previously bonded SOI structures. According to this aspect of the present invention, a pico-second laser pulse technique is employed to determine the bonding imperfections of previously bonded SOI structures.

• Research Organization: Brown Univ., Providence, RI (United States)
• DOE Contract Number: FG02-86ER45267
• Assignee: International Business Machines Corporation (Armonk, NY)
• Patent Number(s): US 6087242
• Application Number: 09/031289
• OSTI ID: 873087
• Country of Publication: United States
• Language: English

Related Subjects

method
improve
commercial
bonded
soi
material
improving
bonding
characteristics
previously
silicon
insulator
structure
provided
improvement
achieved
optionally
forming
oxide
cap
layer
surface
annealing
uncapped
capped
slightly
oxidizing
ambient
temperatures
1200
degree
detecting
structures
according
aspect
pico-second
laser
pulse
technique
employed
determine
imperfections
cap layer
laser pulse
pulse technique
silicon surface
bonding characteristics
oxide cap
bonded silicon
/438/117/