Thermophotovoltaic energy conversion system having a heavily doped n-type region

Patent · Sat Jan 01 00:00:00 EST 2000

OSTI ID:872931

DePoy, David M ^[1]; Charache, Greg W ^[1]; Baldasaro, Paul F ^[1]

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1. Clifton Park, NY

A thermophotovoltaic (TPV) energy conversion semiconductor device is provided which incorporates a heavily doped n-type region and which, as a consequence, has improved TPV conversion efficiency. The thermophotovoltaic energy conversion device includes an emitter layer having first and second opposed sides and a base layer in contact with the first side of the emitter layer. A highly doped n-type cap layer is formed on the second side of the emitter layer or, in another embodiment, a heavily doped n-type emitter layer takes the place of the cap layer.

• Research Organization: Knolls Atomic Power Laboratory (KAPL), Niskayuna, NY (United States)
• DOE Contract Number: AC12-76SN00052
• Assignee: United States of America as represented by United States (Washington, DC)
• Patent Number(s): US 6043426
• OSTI ID: 872931
• Country of Publication: United States
• Language: English

Related Subjects

thermophotovoltaic
energy
conversion
heavily
doped
n-type
region
tpv
semiconductor
device
provided
incorporates
consequence
improved
efficiency
emitter
layer
opposed
base
contact
highly
cap
formed
embodiment
takes
doped n-type
cap layer
emitter layer
heavily doped
conversion efficiency
energy conversion
semiconductor device
base layer
highly doped
n-type region
conversion device
thermophotovoltaic energy
photovoltaic energy
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