Three-dimensional charge coupled device

Patent · Fri Jan 01 00:00:00 EST 1999

OSTI ID:872656

Conder, Alan D ^[1]; Young, Bruce K. F. ^[2]

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1. Tracy, CA
2. Livermore, CA

A monolithic three dimensional charged coupled device (3D-CCD) which utilizes the entire bulk of the semiconductor for charge generation, storage, and transfer. The 3D-CCD provides a vast improvement of current CCD architectures that use only the surface of the semiconductor substrate. The 3D-CCD is capable of developing a strong E-field throughout the depth of the semiconductor by using deep (buried) parallel (bulk) electrodes in the substrate material. Using backside illumination, the 3D-CCD architecture enables a single device to image photon energies from the visible, to the ultra-violet and soft x-ray, and out to higher energy x-rays of 30 keV and beyond. The buried or bulk electrodes are electrically connected to the surface electrodes, and an E-field parallel to the surface is established with the pixel in which the bulk electrodes are located. This E-field attracts charge to the bulk electrodes independent of depth and confines it within the pixel in which it is generated. Charge diffusion is greatly reduced because the E-field is strong due to the proximity of the bulk electrodes.

• Research Organization: Lawrence Livermore National Laboratory (LLNL), Livermore, CA (United States)
• DOE Contract Number: W-7405-ENG-48
• Assignee: Regents of University of California (Oakland, CA)
• Patent Number(s): US 5981988
• OSTI ID: 872656
• Country of Publication: United States
• Language: English

Related Subjects

three-dimensional
charge
coupled
device
monolithic
dimensional
charged
3d-ccd
utilizes
entire
bulk
semiconductor
generation
storage
transfer
provides
vast
improvement
current
ccd
architectures
surface
substrate
capable
developing
strong
e-field
throughout
depth
deep
buried
parallel
electrodes
material
backside
illumination
architecture
enables
single
image
photon
energies
visible
ultra-violet
soft
x-ray
energy
x-rays
30
kev
electrically
connected
established
pixel
located
attracts
independent
confines
generated
diffusion
greatly
reduced
due
proximity
single device
charge coupled
coupled device
semiconductor substrate
substrate material
electrically connected
soft x-ray
greatly reduced
energy x-rays
charge generation
field throughout
greatly reduce
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