Apparatus for silicon web growth of higher output and improved growth stability

Patent · Sun Jan 01 00:00:00 EST 1989

OSTI ID:866953

Duncan, Charles S ^[1]; Piotrowski, Paul A ^[2]

---

1. Penn Hills, PA
2. Monroeville, PA

This disclosure describes an apparatus to improve the web growth attainable from prior web growth configurations. This apparatus modifies the heat loss at the growth interface in a manner that minimizes thickness variations across the web, especially regions of the web adjacent to the two bounding dendrites. In the unmodified configuration, thinned regions of web, adjacent to the dendrites, were found to be the origin of crystal degradation which ultimately led to termination of the web growth. According to the present invention, thinning adjacent to the dendrites is reduced and the incidence of crystal degradation is similarly reduced.

• Research Organization: Jet Propulsion Laboratories
• DOE Contract Number: JPL-957207
• Assignee: United States of America as represented by United States (Washington, DC)
• Patent Number(s): US 4828808
• OSTI ID: 866953
• Country of Publication: United States
• Language: English

Related Subjects

apparatus
silicon
web
growth
output
improved
stability
disclosure
describes
improve
attainable
prior
configurations
modifies
heat
loss
interface
manner
minimizes
thickness
variations
especially
regions
adjacent
bounding
dendrites
unmodified
configuration
thinned
found
origin
crystal
degradation
ultimately
led
termination
according
thinning
reduced
incidence
similarly
web growth
heat loss
disclosure describes
growth interface
silicon web
thickness variation
/117/