Semiconductor junction formation by directed heat

Patent · Thu Mar 24 00:00:00 EST 1988

OSTI ID:866522

Campbell, Robert B ^[1]

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1. Pittsburgh, PA

The process of the invention includes applying precursors 6 with N- and P-type dopants therein to a silicon web 2, with the web 2 then being baked in an oven 10 to drive off excessive solvents, and the web 2 is then heated using a pulsed high intensity light in a mechanism 12 at 1100.degree.-1150.degree. C. for about 10 seconds to simultaneously form semiconductor junctions in both faces of the web.

• DOE Contract Number: 956616MOD1
• Assignee: United States of America as represented by United States (Washington, DC)
• Patent Number(s): US 4729962
• Application Number: 06/843,486
• OSTI ID: 866522
• Country of Publication: United States
• Language: English

Related Subjects

semiconductor
junction
formation
directed
heat
process
applying
precursors
n-
p-type
dopants
therein
silicon
web
baked
oven
10
drive
excessive
solvents
heated
pulsed
intensity
light
mechanism
12
1100
degree
-1150
simultaneously
form
junctions
p-type dopant
p-type dopants
type dopant
semiconductor junction
intensity light
silicon web
type dopants
simultaneously form
junction formation
/438/136/148/