Wide-band-gap, alkaline-earth-oxide semiconductor and devices utilizing same

Patent · Thu Jan 01 00:00:00 EST 1981

OSTI ID:863875

Abraham, Marvin M ^[1]; Chen, Yok ^[1]; Kernohan, Robert H ^[1]

---

1. Oak Ridge, TN

This invention relates to novel and comparatively inexpensive semiconductor devices utilizing semiconducting alkaline-earth-oxide crystals doped with alkali metal. The semiconducting crystals are produced by a simple and relatively inexpensive process. As a specific example, a high-purity lithium-doped MgO crystal is grown by conventional techniques. The crystal then is heated in an oxygen-containing atmosphere to form many [Li].degree. defects therein, and the resulting defect-rich hot crystal is promptly quenched to render the defects stable at room temperature and temperatures well above the same. Quenching can be effected conveniently by contacting the hot crystal with room-temperature air.

• Research Organization: Oak Ridge National Laboratory (ORNL), Oak Ridge, TN (United States)
• Assignee: United States of America as represented by United States (Washington, DC)
• Patent Number(s): US 4264914
• OSTI ID: 863875
• Country of Publication: United States
• Language: English

Related Subjects

wide-band-gap
alkaline-earth-oxide
semiconductor
devices
utilizing
relates
novel
comparatively
inexpensive
semiconducting
crystals
doped
alkali
metal
produced
simple
relatively
process
specific
example
high-purity
lithium-doped
mgo
crystal
grown
conventional
techniques
heated
oxygen-containing
atmosphere
form
degree
defects
therein
resulting
defect-rich
hot
promptly
quenched
render
stable
temperature
temperatures
quenching
effected
conveniently
contacting
room-temperature
air
alkali metal
semiconductor device
semiconductor devices
conventional techniques
relatively inexpensive
specific example
oxide semiconductor
oxygen-containing atmosphere
oxide crystals
devices utilizing
comparatively inexpensive
oxide crystal
defects therein
crystals doped
containing atmosphere
conducting alkali
/327/252/257/