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Title: In situ measurement of fatigue-crack growth rates in a silicon carbide ceramic at elevated temperatures using a D.C. potential system

Journal Article · · Journal of Testing and Evaluation
OSTI ID:789102

The understanding of the mechanisms of fatigue-crack propagation in advanced ceramics at elevated temperatures (>800 degrees C) has in part been hampered by the experimental difficulty in directly measuring crack lengths, and hence crack-growth rates, at such high temperatures.

Research Organization:
Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States)
Sponsoring Organization:
USDOE Director, Office of Science (US)
DOE Contract Number:
AC03-76SF00098
OSTI ID:
789102
Report Number(s):
LBNL-44354; R&D Project: 511906; TRN: AH200137%%313
Journal Information:
Journal of Testing and Evaluation, Vol. 28, Issue 4; Other Information: Journal Publication Date: Jul. 2000; PBD: 12 Oct 1999
Country of Publication:
United States
Language:
English