skip to main content
OSTI.GOV title logo U.S. Department of Energy
Office of Scientific and Technical Information

Title: Effect of band anticrossing on the optical transitions in GaAs1-xNx/GaAs multiple quantum wells

Journal Article · · Physical Review B
OSTI ID:787097

No abstract prepared.

Research Organization:
Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States)
Sponsoring Organization:
USDOE Director, Office of Science. Office of Basic Energy Studies. Division of Materials Sciences (US)
DOE Contract Number:
AC03-76SF00098
OSTI ID:
787097
Report Number(s):
LBNL-46791; R&D Project: 503920; TRN: AH200134%%33
Journal Information:
Physical Review B, Vol. 64, Issue 8; Other Information: Journal Publication Date: August 15, 2001; PBD: 1 Sep 2000
Country of Publication:
United States
Language:
English

Similar Records

Effect of band anticrossing on the optical transitions in GaAs{sub 1-x}N{sub x}/GaAs multiple quantum wells
Journal Article · Wed Aug 15 00:00:00 EDT 2001 · Physical Review B · OSTI ID:787097

Band anticrossing in GaP1-xNx alloys
Journal Article · Mon Nov 19 00:00:00 EST 2001 · Physical Review B · OSTI ID:787097

Pressure dependence of optical transitions in In{sub 0.15}Ga{sub 0.85}N/GaN Multiple Quantum Wells
Journal Article · Sat Jun 20 00:00:00 EDT 1998 · Physical Review B. Condensed Matter and Materials Physics · OSTI ID:787097