Characterization of high-T/sub c/ Nb--Ge thin films by ion scattering, ion-induced x-rays, and ion resonance techniques

Conference · Thu Jan 01 00:00:00 EST 1976

OSTI ID:7152975

Miller, J W; Appleton, E R; Murphree, Q C; Gavaler, J R

Thin films of high-T/sub c/ (21-22/sup 0/K) Nb--Ge were analyzed using three ion bombardment techniques. The depth dependence of stoichiometry in these superconducting thin films is determined by the deconvolution of a series of Rutherford backscattering spectra using 2.0-3.2 MeV /sup 4/He ions at several incidence and scattering angles. Confirmation of these results is provided by studying the yields of Nb and Ge characteristic X-rays as a function of the angle of beam incidence. The depth dependence of oxygen, or oxides of Nb and Ge, is of particular interest, but more difficult to determine. A very sharp ion scattering resonance /sup 16/O (..cap alpha..,..cap alpha..) at 3.045 MeV was utilized to enhance the backscattered yield and depth sensitivity of oxygen determination. The combined use of these three techniques now provides a nearly complete and nondestructive means for the characterization of such films. (auth)

• Research Organization: Oak Ridge National Lab., Tenn. (USA); Westinghouse Research Labs., Pittsburgh, Pa. (USA)
• OSTI ID: 7152975
• Report Number(s): CONF-760513-1; TRN: 76-021055
• Resource Relation: Conference: 22. international instrumentation of the Instrument Society of America, San Diego, CA, USA, 25 May 1976
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
37 INORGANIC
ORGANIC
PHYSICAL AND ANALYTICAL CHEMISTRY
75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
GERMANIUM ALLOYS
ION SCATTERING ANALYSIS
NIOBIUM ALLOYS
BACKSCATTERING
DEPTH
FILMS
NONDESTRUCTIVE TESTING
OXYGEN
RESONANCE
STOICHIOMETRY
SUPERCONDUCTORS
X-RAY EMISSION ANALYSIS
ALLOYS
CHEMICAL ANALYSIS
CRYOGENIC FLUIDS
DIMENSIONS
ELEMENTS
FLUIDS
MATERIALS TESTING
NONDESTRUCTIVE ANALYSIS
NONMETALS
SCATTERING
TESTING
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