Doped semiconductor material and method for doping same

Patent · Tue Jan 26 00:00:00 EST 1982

OSTI ID:7078870

Yang, C. Y.

A method for doping semiconductor material and the semiconductor produced by the method are described. An interface is established between a solid electrolyte and a semiconductor to be doped. The electrolyte is chosen to be an ionic conductor of the selected impurity and the semiconductor material and electrolyte are jointly chosen so that any compound formed from the impurity and the semiconductor will have a free energy no lower than the electrolyte. A potential is then established across the interface so as to allow the impurity ions to diffuse into the semiconductor. In one embodiment the semiconductor and electrolyte may be heated so as to increase the diffusion coefficient.

• DOE Contract Number: AC02-76CH00016
• Assignee: Dept. of Energy
• Patent Number(s): PATENTS-US-A342683
• Application Number: ON: DE83002371
• OSTI ID: 7078870
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
CRYSTAL DOPING
SEMICONDUCTOR MATERIALS
DIFFUSION
DOPED MATERIALS
ELECTRIC POTENTIAL
ELECTROCHEMISTRY
ELECTRODES
SOLID ELECTROLYTES
CHEMISTRY
ELECTROLYTES
MATERIALS
420800* - Engineering- Electronic Circuits & Devices- (-1989)