Scaling behavior in interference lithography
Interference lithography is an emerging, technology that provides a means for achieving high resolution over large exposure areas (approximately 1 m{sup 2}) with virtually unlimited depth of field. One- and two-dimensional arrays of deep submicron structures can be created using near i-line wavelengths and standard resist processing. In this paper, we report on recent advances in the development of this technology, focusing, in particular, on how exposure latitude and resist profile scale with interference period We present structure width vs dose curves for periods ranging from 200 nm to 1 um, demonstrating that deep submicron structures can be generated with exposure latitudes exceeding 30%. Our experimental results are compared to simulations based on PROLITIV2.
- Research Organization:
- Lawrence Livermore National Lab. (LLNL), Livermore, CA (United States)
- Sponsoring Organization:
- USDOE, Washington, DC (United States)
- DOE Contract Number:
- W-7405-ENG-48
- OSTI ID:
- 675085
- Report Number(s):
- UCRL-JC-128441; CONF-980225-; ON: DE98058333; CNN: W-7405-Eng-48
- Resource Relation:
- Conference: 23. SPIE annual international symposium on microlithography conference, Santa Clara, CA (United States), 22-27 Feb 1998; Other Information: PBD: 27 Feb 1998
- Country of Publication:
- United States
- Language:
- English
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