Effect of crystal growth direction on the energy resolution of high-purity germanium detectors

Conference · Sun Oct 01 00:00:00 EDT 1978

OSTI ID:6424159

Hubbard, G S; Haller, E E; Hansen, W L

(100) and (113) direction high-purity germanium crystals with dislocation densities > 10/sup 4/ cm/sup -2/ have been examined by Hall effect, Deep Level Transient Spectroscopy and gamma-ray spectrometer performance. High dislocation density in (100) crystals appears to give rise to acceptor levels which cause broadened and/or asymmetric photopeaks. (113) crystals with EPD > 10/sup 4/cm/sup -2/ do not show these effects.

• Research Organization: California Univ., Berkeley (USA). Lawrence Berkeley Lab.
• DOE Contract Number: W-7405-ENG-48
• OSTI ID: 6424159
• Report Number(s): LBL-8133; CONF-781033-32; TRN: 79-005651
• Resource Relation: Conference: IEEE nuclear science symposium, Washington, DC, USA, 18 Oct 1978
• Country of Publication: United States
• Language: English

Related Subjects

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY
HIGH-PURITY GE DETECTORS
ENERGY RESOLUTION
CRYSTAL GROWTH
DISLOCATIONS
LATTICE PARAMETERS
CRYSTAL DEFECTS
CRYSTAL STRUCTURE
GE SEMICONDUCTOR DETECTORS
LINE DEFECTS
MEASURING INSTRUMENTS
RADIATION DETECTORS
RESOLUTION
SEMICONDUCTOR DETECTORS
440103* - Radiation Instrumentation- Nuclear Spectroscopic Instrumentation