Resistive Contrast Imaging applied to multilevel interconnection failure analysis

Conference · Sun Jan 01 00:00:00 EST 1989

OSTI ID:6251637

Cole, Jr., E. I.

Resistive Contrast Imaging (RCI) is a new failure analysis technique that uses a scanning electron microscope to generate a relative resistance map of an integrated circuit. The RCI map may be used to localize abrupt changes in resistance and verify continuity. Results using RCI on several two-level interconnection devices are described. The images demonstrate how RCI may be used to differentiate between levels and to localize metal shorts and opens. Methods for improving image quality and level differentiation as well as future development work are discussed. 9 refs., 8 figs.

• Research Organization: Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
• DOE Contract Number: AC04-76DP00789
• OSTI ID: 6251637
• Report Number(s): SAND-89-0486C; CONF-8906115-1; ON: DE89011066
• Resource Relation: Conference: VLSI multilevel interconnection conference, Santa Clara, CA, USA, 12 Jun 1989; Other Information: Portions of this document are illegible in microfiche products
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
ELECTRONIC CIRCUITS
FAILED ELEMENT DETECTION
ELECTRICAL FAULTS
IMAGES
MICROELECTRONICS
SCANNING ELECTRON MICROSCOPY
SYSTEM FAILURE ANALYSIS
DETECTION
ELECTRON MICROSCOPY
MICROSCOPY
SYSTEMS ANALYSIS
420800* - Engineering- Electronic Circuits & Devices- (-1989)
420500 - Engineering- Materials Testing