An application of selective electrochemical wafer thinning for silicon characterization

Conference · Mon Jan 01 00:00:00 EST 1990

OSTI ID:5996648

Medernach, J W; Stein, H J; Stevenson, J O

A new technique is reported for the rapid determination of interstitial oxygen (O{sub i}) in heavily doped n{sup +} and p{sup +} silicon. This technique includes application of a selective electrochemical thinning (SET) process and FTIR transmittance measurement on a limited area of a silicon wafer. The O{sub i} is calculated using ASTM F1188--88 with the IOC 88 calibration factor. An advantage of SET over mechanical thinning is that the original wafer thickness and diameter are maintained for additional processing. 1 tab.

• Research Organization: Sandia National Labs., Albuquerque, NM (USA)
• Sponsoring Organization: USDOE; USDOE, Washington, DC (USA)
• DOE Contract Number: AC04-76DP00789
• OSTI ID: 5996648
• Report Number(s): SAND-90-3090C; CONF-910552-7; ON: DE91007517
• Resource Relation: Conference: 179. meeting of the Electrochemical Society, Washington, DC (USA), 5-10 May 1991
• Country of Publication: United States
• Language: English

Related Subjects

37 INORGANIC
ORGANIC
PHYSICAL AND ANALYTICAL CHEMISTRY
OXYGEN
MEASURING METHODS
SILICON
INFRARED SPECTRA
FOURIER TRANSFORMATION
INTERSTITIALS
SUBSTRATES
CRYSTAL DEFECTS
CRYSTAL STRUCTURE
ELEMENTS
INTEGRAL TRANSFORMATIONS
NONMETALS
POINT DEFECTS
SEMIMETALS
SPECTRA
TRANSFORMATIONS
400102* - Chemical & Spectral Procedures