Status of NTD Ge bolometer material and devices

Conference · Thu Aug 01 00:00:00 EDT 1985

OSTI ID:5049863

Haller, E E; Haegel, N M; Park, I S

This status report is a direct follow-up to the presentation given at the first IR Detector Technology Workshop which took place at NASA Ames Research Center on July 12 and 13, 1983. The conclusions which we presented at that meeting are still fully valid. In the meantime we have learned more about the physics of hopping conduction at very low temperatures which will be important for bolometer design and operation at ever decreasing temperatures. Resistivity measurements have been extended down to 50 mK. At such low temperatures, precise knowledge of the neutron capture cross sections sigma/sub n/ of the various Ge isotopes is critical if one is to make an accurate prediction of the dopant concentrations and compensation, and therefore resistivity, that will result from a given irradiation. We describe an empirical approach for obtaining the desired resistivity material and are in the process of conducting a set of experiments which will improve the knowledge of the effective sigma/sub n/ values for a given location in a particular reactor. A wider range of NTD Ge samples is now available. Noise measurements on bolometers with ion implanted contacts show that no 1/f noise component appears down to 1 Hz and probably lower. 4 refs., 5 figs.

• Research Organization: Lawrence Berkeley Lab., CA (USA)
• DOE Contract Number: AC03-76SF00098
• OSTI ID: 5049863
• Report Number(s): LBL-20237; CONF-8508141-2; ON: DE86001988
• Resource Relation: Conference: IR detector technology workshop, Mountain View, CA, USA, 13 Aug 1985
• Country of Publication: United States
• Language: English

Related Subjects

47 OTHER INSTRUMENTATION
GE SEMICONDUCTOR DETECTORS
BOLOMETERS
PHYSICAL RADIATION EFFECTS
CRYSTAL DOPING
FABRICATION
INFRARED RADIATION
NEUTRONS
TRANSMUTATION
BARYONS
ELECTROMAGNETIC RADIATION
ELEMENTARY PARTICLES
FERMIONS
HADRONS
MEASURING INSTRUMENTS
NUCLEONS
RADIATION DETECTORS
RADIATION EFFECTS
RADIATIONS
SEMICONDUCTOR DETECTORS
440300* - Miscellaneous Instruments- (-1989)