Porous Si structure as moisture sensor
- Sandia National Labs., Albuquerque, NM (United States)
- National Semiconductor Corp., Santa Clara, CA (United States)
Development and characterization of a capacitive moisture sensor made from porous Si is presented. The sensor development was in support of the DoD funded Plastic Package Availability program and was intended for the detection of pinholes and defects in moisture barrier coatings applied to ICs during fabrication or during the plastic encapsulation assembly process.
- Research Organization:
- Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
- Sponsoring Organization:
- USDOE, Washington, DC (United States)
- DOE Contract Number:
- AC04-94AL85000
- OSTI ID:
- 432952
- Report Number(s):
- SAND-96-2511C; CONF-9610143-2; ON: DE97002468; TRN: AHC29704%%68
- Resource Relation:
- Conference: 6. international workshop on moisture in microelectronics, Gaithersburg, MD (United States), 15-17 Oct 1996; Other Information: PBD: [1996]
- Country of Publication:
- United States
- Language:
- English
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