Electronic and optical characterization of bulk single crystals of cubic boron nitride (cBN)

Milas, Peker; Mathab, Sheikh; Abraham, John Bishoy Sam; Alam, Jahangir; Chandrashekar, M. S.; Robinson, Adam J.; Vora, Patrick M.; Ozturk, Birol; Spencer, Michael G.

doi:10.1063/5.0092557

Title: Electronic and optical characterization of bulk single crystals of cubic boron nitride (cBN)

Journal Article · Fri Sep 02 00:00:00 EDT 2022 · AIP Advances

DOI:https://doi.org/10.1063/5.0092557· OSTI ID:2319014

Milas, Peker ^[1]; Mathab, Sheikh ^[1];

^[2]; Alam, Jahangir ^[1]; Chandrashekar, M. S. ^[3]; Robinson, Adam J. ^[4];

^[4];

^[1];

^[5]

Morgan State University, Baltimore, MD (United States)
Johns Hopkins Applied Physics Laboratory, Laurel, MD (United States)
University of South Carolina, Columbia, SC (United States)
George Mason University, Fairfax, VA (United States)
Morgan State University, Baltimore, MD (United States); Cornell University, Ithaca, NY (United States)

Cubic boron nitride (cBN) is a relatively less studied wide bandgap semiconductor despite its many promising mechanical, thermal, and electronic properties. We report on the electronic, structural, and optical characterization of commercial cBN crystal platelets. Temperature dependent transport measurements revealed the charge limited diode behavior of the cBN crystals. The equilibrium Fermi level was determined to be 0.47 eV below the conduction band, and the electron conduction was identified as n-type. Unirradiated dark and amber colored cBN crystals displayed broad photoluminescence emission peaks centered around different wavelengths. RC series zero phonon line defect emission peaks were observed at room temperature from the electron beam irradiated and oxygen ion implanted cBN crystals, making this material a promising candidate for high power microwave devices, next generation power electronics, and future quantum sensing applications.

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Research Organization:: University of the District of Columbia, Washington, DC (United States)

Sponsoring Organization:: USDOE National Nuclear Security Administration (NNSA); National Science Foundation (NSF); US Air Force Office of Scientific Research (AFOSR)

Grant/Contract Number:: NA0003945; FOA-0003945; NNCI-2025233; DMR-1847782; 1831954; 2101102; FA9550-19-1-0122

OSTI ID:: 2319014

Alternate ID(s):: OSTI ID: 1885185

Journal Information:: AIP Advances, Vol. 12, Issue 9; ISSN 2158-3226

Publisher:: American Institute of Physics (AIP)Copyright Statement

Country of Publication:: United States

Language:: English

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36 MATERIALS SCIENCE
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