Fluorescent conjugated polymers containing semi-ladder units for light-emitting field-effect transistors
Patent
·
OSTI ID:2293723
Materials are provided for use as active emissive layers in organic electronic devices such as light-emitting filed effect transistors. Light-emitting transistors (LET) are an alternative to light-emitting diodes and have several important benefits, however, materials developed specifically for LET are quite scarce. Herein a new family of materials is disclosed that has been developed specifically for LET.
- Research Organization:
- Argonne National Laboratory (ANL), Argonne, IL (United States); Univ. of Chicago, IL (United States)
- Sponsoring Organization:
- USDOE; National Science Foundation (NSF)
- DOE Contract Number:
- AC02-06CH11357; 1420709; 1802274; 1834750
- Assignee:
- The University of Chicago (Chicago, IL)
- Patent Number(s):
- 11,788,002
- Application Number:
- 17/097,731
- OSTI ID:
- 2293723
- Resource Relation:
- Patent File Date: 11/13/2020
- Country of Publication:
- United States
- Language:
- English
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