Room temperature persisting surface charge carriers driven by intense terahertz electric fields in a topological insulator Bi2Se3

Luo, Liang; Cheng, Di; Huang, Chuankun; Yang, Xu; Vaswani, Chirag; Mootz, Martin; Yao, Yongxin; Liu, Xinyu; Dobrowolska, Margaret; Furdyna, Jacek K.; Perakis, Ilias E.; Wang, Jigang

doi:10.1063/5.0181223

Title: Room temperature persisting surface charge carriers driven by intense terahertz electric fields in a topological insulator Bi₂Se₃

Journal Article · Fri Dec 29 00:00:00 EST 2023 · APL Materials

DOI:https://doi.org/10.1063/5.0181223· OSTI ID:2278841

^[1]; Cheng, Di ^[2]; Huang, Chuankun ^[2];

^[2]; Vaswani, Chirag ^[2]; Mootz, Martin ^[3];

^[1];

^[4];

^[5];

^[2]

Ames Laboratory (AMES), Ames, IA (United States)
Ames Lab., and Iowa State Univ., Ames, IA (United States)
Iowa State Univ., Ames, IA (United States)
University of Notre Dame, IN (United States)
Univ. of Alabama, Birmingham, AL (United States)

Topologically protected surface current is highly promising for next-generation low-dissipation and disorder-tolerant quantum electronics and computing. Yet, electric transport from the co-existing bulk state dominates the responses of the Dirac surface state, especially at elevated temperatures relevant to technological applications. Here, we present an approach that convincingly showcases the generation, disentanglement, and precise control of enduring surface charge carriers on a topological insulator, Bi₂Se₃, with high bulk conductivity, all achieved at room temperature. By using pump–probe modulation spectroscopy under ultrabroadband driving tunable from 4 meV to 1.55 eV, we show the terahertz (THz) field-induced surface carriers by discovering their initial temporal responses dominant over high density trivial bulk carriers. Strikingly, the response of the induced surface carrier responses persists for more than ~5 ps and is enhanced by reducing pump photon energy. The dynamics and lifetime of the distinct surface response manifest themselves as the enhanced THz pump-induced THz transmission, which directly correlates with the transient negative THz conductivity. Increasing the THz driving field reduces the induced surface carrier lifetime and identifies, particularly, an optimal pump field of E_s ~ 224 kV cm^-1 for generating the dominant surface response relative to the bulk. This surface carrier dominant regime is suppressed by a joint effect of enhanced surface-bulk scattering and a more rapid saturation of surface excitation compared to the bulk that sets in above E_s. The controllability of room temperature topologically surface carriers through pump photon energy offer compelling possibilities for extending this approach to other topological complex materials.

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Research Organization:: Ames Laboratory (AMES), Ames, IA (United States)

Sponsoring Organization:: USDOE Office of Science (SC), Basic Energy Sciences (BES). Materials Sciences & Engineering Division (MSE); National Science Foundation (NSF)

Grant/Contract Number:: AC02- 07CH11358; SC0019137; DMR 1905277

OSTI ID:: 2278841

Report Number(s):: IS-J-11,225

Journal Information:: APL Materials, Vol. 11, Issue 12; ISSN 2166-532X

Publisher:: American Institute of Physics (AIP)Copyright Statement

Country of Publication:: United States

Language:: English

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36 MATERIALS SCIENCE
Surface states
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Title: Room temperature persisting surface charge carriers driven by intense terahertz electric fields in a topological insulator Bi2Se3

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Title: Room temperature persisting surface charge carriers driven by intense terahertz electric fields in a topological insulator Bi₂Se₃