Nanocomposite-seeded epitaxial growth of single-domain lithium niobate thin films for surface acoustic wave devices
Patent
·
OSTI ID:2222277
A method for making LNO film, including the steps of identifying a substrate, identifying a deposition target, placing the substrate and deposition target in a deposition environment, evolving target material into the deposition environment, and depositing evolved target material onto the substrate to yield an LNO film. The deposition environment defines a temperature of between 500 degrees Celsius and 750 degrees Celsius and a pressure of about 10−6 Torr. A seed or buffer layer may be first deposited onto the substrate, wherein the seed layer is about 30 mole percent gold and about 70 LiNbO3.
- Research Organization:
- Sandia National Lab. (SNL-NM), Albuquerque, NM (United States); Purdue Univ., West Lafayette, IN (United States)
- Sponsoring Organization:
- USDOE
- DOE Contract Number:
- NA0003525; SC0020077
- Assignee:
- Purdue Research Foundation (West Lafayette, IN)
- Patent Number(s):
- 11,746,437
- Application Number:
- 17/555,660
- OSTI ID:
- 2222277
- Resource Relation:
- Patent File Date: 12/20/2021
- Country of Publication:
- United States
- Language:
- English
Highly c-axis oriented LiNbO3 thin film grown on SiO2/Si substrates by pulsed laser deposition
|
journal | August 2002 |
Epitaxial growth of LiNbO 3 thin films by excimer laser ablation method and their surface acoustic wave properties
|
journal | August 1992 |
Pulsed-Laser Deposition of LiNbO3 in Low Gas Pressure Using Pure Ozone
|
journal | August 2004 |
Similar Records
Nanocomposite‐Seeded Epitaxial Growth of Single‐Domain Lithium Niobate Thin Films for Surface Acoustic Wave Devices
Process for depositing an oxide epitaxially onto a silicon substrate and structures prepared with the process
Alignment nature of ZnO nanowires grown on polished and nanoscale etched lithium niobate surface through self-seeding thermal evaporation method
Journal Article
·
Tue Mar 30 00:00:00 EDT 2021
· Advanced Photonics Research
·
OSTI ID:2222277
+8 more
Process for depositing an oxide epitaxially onto a silicon substrate and structures prepared with the process
Patent
·
Tue Jul 06 00:00:00 EDT 1993
·
OSTI ID:2222277
Alignment nature of ZnO nanowires grown on polished and nanoscale etched lithium niobate surface through self-seeding thermal evaporation method
Journal Article
·
Sat Aug 15 00:00:00 EDT 2015
· Materials Research Bulletin
·
OSTI ID:2222277