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Title: Trapped-ion entangling gates with bichromatic pair of microwave fields and magnetic field gradient

Patent ·
OSTI ID:2222180

A trapped-ion quantum logic gate and a method of operating the trapped-ion quantum logic gate are provided. The trapped-ion quantum logic gate includes at least one ion having two internal states and forming a qubit having a qubit transition frequency ω00, a magnetic field gradient, and two microwave fields. Each of the two microwave fields has a respective frequency that is detuned from the qubit transition frequency ω0 by frequency difference δ. The at least one ion has a Rabi frequency Ωμ due to the two microwave fields and a Rabi frequency Ωg due to the magnetic field gradient. The method includes applying the magnetic field gradient and the two microwave fields to the at least one ion such that a quantity Ωg/δ is in a range between zero and 5×10−2.

Research Organization:
Lawrence Livermore National Laboratory (LLNL), Livermore, CA (United States)
Sponsoring Organization:
USDOE
DOE Contract Number:
AC52-07NA27344
Assignee:
Lawrence Livermore National Security, LLC (Livermore, CA)
Patent Number(s):
11,726,387
Application Number:
16/783,875
OSTI ID:
2222180
Resource Relation:
Patent File Date: 02/06/2020
Country of Publication:
United States
Language:
English

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