Space charge trap-assisted recombination suppressing layer for low-voltage diode operation
Shockley-Read-Hall (SRH) generation and/or recombination in heterojunction devices is suppressed by unconventional doping at or near the heterointerface. The effect of this doping is to shift SRH generation and/or recombination preferentially into the wider band gap material of the heterojunction. This reduces total SRH generation and/or recombination in the device by decreasing the intrinsic carrier concentration ni at locations where most of the SRH generation and/or recombination occurs. The physical basis for this effect is that the SRH generation and/or recombination rate tends to decrease as ni around the depletion region decreases, so decreasing the effective ni in this manner is a way to decrease SRH recombination.
- Research Organization:
- Stanford Univ., CA (United States)
- Sponsoring Organization:
- USDOE
- DOE Contract Number:
- SC0001293; SC0019140
- Assignee:
- The Board of Trustees of the Leland Stanford Junior University (Stanford, CA)
- Patent Number(s):
- 11,715,809
- Application Number:
- 17/358,980
- OSTI ID:
- 2222039
- Resource Relation:
- Patent File Date: 06/25/2021
- Country of Publication:
- United States
- Language:
- English
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