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Title: Monolithic integrated quantum dot photonic integrated circuits

Patent ·
OSTI ID:2221947

A photonic integrated circuit (PIC) includes a semiconductor substrate, one or more passive components, and one or more active components. The one or more passive components are fabricated on the semiconductor substrate, wherein the passive components are fabricated in a III-V type semiconductor layer. The one or more active components are fabricated on top of the one or more passive components, wherein optical signals are communicated between the one or more active components via the one or more passive components.

Research Organization:
Univ. of California, Santa Barbara, CA (United States)
Sponsoring Organization:
USDOE Advanced Research Projects Agency - Energy (ARPA-E)
DOE Contract Number:
AR0000672
Assignee:
The Regents of the University of California (Oakland, CA)
Patent Number(s):
11,693,178
Application Number:
17/882,909
OSTI ID:
2221947
Resource Relation:
Patent File Date: 08/08/2022
Country of Publication:
United States
Language:
English

References (43)

Reliability of quantum well and quantum dot lasers for silicon photonics (invited) conference October 2017
GaAs bipolar transistors grown on (100) Si substrates by molecular beam epitaxy journal August 1985
Tunable laser source with monolithically integrated interferometric optical modulator patent December 2009
A Comparison of Four Approaches to Photonic Integration conference January 2017
Electrically pumped hybrid AlGaInAs-silicon evanescent laser journal January 2006
Three-Dimensional Si/Ge Quantum Dot Crystals journal October 2007
An ultrawide-band semiconductor optical amplifier having an extremely high penalty-free output power of 23 dBm achieved with quantum dots journal August 2005
Quantum-Dot Mode-Locked Lasers: Sources for Tunable Optical and Electrical Pulse Combs book January 2017
Improved room-temperature continuous wave GaAs/AlGaAs and InGaAs/GaAs/AlGaAs lasers fabricated on Si substrates via relaxed graded Ge[sub x]Si[sub 1−x] buffer layers
  • Groenert, Michael E.; Pitera, Arthur J.; Ram, Rajeev J.
  • Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, Vol. 21, Issue 3 https://doi.org/10.1116/1.1576397
journal January 2003
Silicon on ultra-low-loss waveguide photonic integration platform journal January 2013
Method for making monolithically integrated signal processing circuit having active and passive components patent June 1998
Electrically pumped continuous-wave 13 µm InAs/GaAs quantum dot lasers monolithically grown on on-axis Si (001) substrates journal January 2017
Dislocation filters in GaAs on Si journal October 2015
Room-temperature continuous-wave operation in the telecom wavelength range of GaSb-based lasers monolithically grown on Si journal June 2017
Quantum-Dot Semiconductor Optical Amplifiers journal September 2007
Process for forming semiconductor quantum dots with superior structural and phological stability patent-application September 2004
Diode Lasers and Photonic Integrated Circuits book January 2012
Modulation bandwidth and energy efficiency of metallic cavity semiconductor nanolasers with inclusion of noise effects: Modulation bandwidth and energy efficiency of metallic cavity semiconductor nanolasers journal July 2015
InGaAs/GaAs quantum well lasers grown on exact GaP/Si (001) journal August 2014
An electrically pumped germanium laser journal January 2012
Quantum dot optoelectronic devices with nanoscale epitaxial lateral overgrowth and methods of manufacture patent June 2009
On the physics of semiconductor quantum dots for applications in lasers and quantum optics journal May 2013
Energy Efficient and Energy Proportional Optical Interconnects for Multi-Core Processors: Driving the Need for On-Chip Sources journal July 2014
Ultrafast carrier dynamics in InGaAs quantum dot materials and devices journal March 2006
A Path to 300 mm Hybrid Silicon Photonic Integrated Circuits conference January 2014
Heterogeneously Integrated Photodiodes on Silicon journal November 2015
High Performance InP-Based Photonic ICs—A Tutorial journal February 2011
Laser device integrated with semiconductor optical amplifier on silicon substrate patent May 2018
On-chip single photon filtering and multiplexing in hybrid quantum photonic circuits journal August 2017
Electro-optic and electro-absorption characterization of InAs quantum dot waveguides journal January 2008
Monolithic integrated quantum dot photonic integrated circuits patent September 2022
Electrically pumped continuous-wave III–V quantum dot lasers on silicon journal March 2016
Room-temperature self-organised In0.5Ga0.5As quantum dot laser on silicon journal January 2005
Intensity and Phase Modulators in Epitaxial III-V Layers Directly Grown on Silicon Operating at 1.55 µm conference January 2017
Silicon photonic integration in telecommunications journal August 2015
Quantum-dot mode-locked lasers for microwave-signal generation and 160 Gb/s optical communication conference October 2015
Planar waveguides with less than 01 dB/m propagation loss fabricated with wafer bonding journal January 2011
Nanometre-scale electronics with III–V compound semiconductors journal November 2011
Giant linewidth enhancement factor and purely frequency modulated emission from quantum dot laser journal January 2005
Multidimensional quantum well laser and temperature dependence of its threshold current journal June 1982
High-speed 1.3μm tunnel injection quantum-dot lasers journal April 2005
Quantum dot semiconductor device patent November 2010
Proton radiation effects in quantum dot lasers journal November 2008

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