P-V-T equation of state of boron carbide
- Argonne National Laboratory (ANL), Argonne, IL (United States)
- University of Illinois, Chicago, IL (United States)
- Army Research Laboratory, Aberdeen, MD (United States)
- Lawrence Livermore National Laboratory (LLNL), Livermore, CA (United States)
We report the P-V-T equation of state measurements of B4C to 50 GPa and approximately 2500 K in laser-heated diamond anvil cells. We obtain an ambient temperature, third-order Birch–Murnaghan fit to the P-V data that yields a bulk modulus K0 of 221(2) GPa and derivative, (dK/dP)0 of 3.3(1). These were used in fits with both a Mie–Grüneisen–Debye model and a temperature-dependent, Birch–Murnaghan equation of state that includes thermal pressure estimated by thermal expansion (α) and a temperature-dependent bulk modulus (dK0/dT). The ambient pressure thermal expansion coefficient (α0 + α1T), Grüneisen γ(V) = γ0(V/V0)q and volume-dependent Debye temperature, were used as input parameters for these fits and found to be sufficient to describe the data in the whole P-T range of this study.
- Research Organization:
- University of Illinois, Chicago, IL (United States)
- Sponsoring Organization:
- USDOE Office of Science (SC), Basic Energy Sciences (BES). Scientific User Facilities (SUF); USDOE National Nuclear Security Administration (NNSA); National Science Foundation (NSF)
- Grant/Contract Number:
- NA0003975; AC02-06CH11357; AC52-07NA27344; DMR-2119308
- OSTI ID:
- 2006510
- Journal Information:
- Philosophical Transactions of the Royal Society. A, Mathematical, Physical and Engineering Sciences, Vol. 381, Issue 2258; ISSN 1364-503X
- Publisher:
- The Royal Society PublishingCopyright Statement
- Country of Publication:
- United States
- Language:
- English
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