Sensitive and robust thin film X-ray detector using 2D layered perovskite diodes
Patent
·
OSTI ID:1998510
A radiation detector includes a p-i-n architecture including a p-type contact layer, an n-type contact layer, and an intrinsic layer between the p-type contact layer and the n-type contact layer. The intrinsic layer includes a thin film comprising a highly crystalline 2D layered perovskite material. The radiation detectors according to embodiments of the present disclosure generate high open circuit voltages, have good detecting photon density limits and high sensitivities, and can be self-powered.
- Research Organization:
- Los Alamos National Laboratory (LANL), Los Alamos, NM (United States)
- Sponsoring Organization:
- USDOE National Nuclear Security Administration (NNSA)
- DOE Contract Number:
- 89233218CNA000001
- Assignee:
- Triad National Security, LLC (Los Alamos, NM)
- Patent Number(s):
- 11,681,059
- Application Number:
- 17/489,645
- OSTI ID:
- 1998510
- Resource Relation:
- Patent File Date: 09/29/2021
- Country of Publication:
- United States
- Language:
- English
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