Multimodal microscopy of extended defects in β-Ga2O3 (010) EFG crystals

Haven, Drew; Moutinho, Helio; Mangum, John S.; Guthrey, Harvey; Joyce, David; Zakutayev, Andriy; Haegel, Nancy M.

doi:10.1063/5.0158904

Title: Multimodal microscopy of extended defects in β-Ga₂O₃ (010) EFG crystals

Journal Article · Tue Jul 18 00:00:00 EDT 2023 · AIP Advances

DOI:https://doi.org/10.1063/5.0158904· OSTI ID:1992830

Haven, Drew ^[1]; Moutinho, Helio ^[2];

^[2]; Guthrey, Harvey ^[2]; Joyce, David ^[1];

^[2];

^[2]

Luxium Solutions LLC, Milford, NH (United States)
National Renewable Energy Laboratory (NREL), Golden, CO (United States)

Beta-phase gallium oxide (β-Ga₂O₃) has attracted attention in recent years as a potentially low cost, large area substrate and active layer material for high power, high temperature power electronics and sensing devices. However, growth of β-Ga₂O₃ crystals is complicated by easily activated (100) and (001) cleavage planes, the presence of low angle grain boundaries (LAGBs) and twins, and the potential formation of polycrystalline grains. In this study, β-Ga₂O₃ crystals were grown by the edge-defined film-fed growth technique with an (010) principal face. Two crystals with apparently randomly formed high angle grain boundaries (HAGBs) were selected and analyzed by electron backscatter diffraction, electron channeling contrast imaging, and cathodoluminescence to investigate the nature of the LAGBs and the source of the HAGB formation. It was discovered that planar LAGBs lying parallel to the (010) plane exist in the region immediately preceding the start of an HAGB. Increased misorientation across the LAGB was observed, approaching the initiation of a new grain. We present multimodal microscopy characterization, correlating misorientation and variation in optoelectronic properties with LAGBs and the associated dislocations.

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Research Organization:: National Renewable Energy Laboratory (NREL), Golden, CO (United States)

Sponsoring Organization:: USDOE Office of Energy Efficiency and Renewable Energy (EERE), Energy Efficiency Office. Advanced Materials & Manufacturing Technologies Office (AMMTO); National Science Foundation (NSF)

Grant/Contract Number:: AC36-08GO28308; DMR-1828454

OSTI ID:: 1992830

Report Number(s):: NREL/JA-5K00-86264; MainId:87037; UUID:03439df2-8a69-4e74-bcfb-4a782bd52c83; MainAdminID:70034; TRN: US2404302

Journal Information:: AIP Advances, Vol. 13, Issue 7; ISSN 2158-3226

Publisher:: American Institute of Physics (AIP)Copyright Statement

Country of Publication:: United States

Language:: English

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Related Subjects

36 MATERIALS SCIENCE
14 SOLAR ENERGY
Power electronics
Crystallographic defects
Crystalline solids
Microscopy
Polycrystalline material
Cathodoluminescence spectroscopy
Semiconductor crystals
Electron backscatter diffraction
Optoelectronic properties
Oxides
EBSD
ECCI
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gallium oxide
grain boundaries
multimodal microscopy

Title: Multimodal microscopy of extended defects in β-Ga2O3 (010) EFG crystals

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References (19)

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Title: Multimodal microscopy of extended defects in β-Ga₂O₃ (010) EFG crystals