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Title: Systems and methods for piezoelectric, electronic, and photonic devices with dual inversion layers

Patent ·
OSTI ID:1987092

An apparatus comprising a substrate, one or more nanowire pillars, each having a base portion and a tip portion, a first electrode connected to the tip portions of the one or more nanowire pillars, an internal hollow cavity positioned between the substrate and the first electrode, such that at least a portion of each of the one or more nanowire pillars extend through the internal hollow cavity, and a second electrode proximate the first side of the substrate. High-performance broadband photodetectors and other optoelectronics for converting light to electricity with enhanced absorption and carrier collection.

Research Organization:
Georgia Institute of Technology, Atlanta, GA (United States)
Sponsoring Organization:
USDOE
DOE Contract Number:
FG02-07ER46394
Assignee:
Georgia Tech Research Corporation (Atlanta, GA)
Patent Number(s):
11,569,432
Application Number:
17/098,779
OSTI ID:
1987092
Resource Relation:
Patent File Date: 11/16/2020
Country of Publication:
United States
Language:
English

References (7)

Anodes, Solar Cells and Methods of Making Same patent-application October 2015
Nanostructure Optoelectronic Device Having Sidewall Electrical Contact patent-application December 2011
Nanowire sized opto-electronic structure and method for manufacturing the same patent January 2013
High efficiency graphene/wide band-gap semiconductor heterojunction solar cells patent November 2020
Methods of Manufacturing P-Type Zn Oxide Nanowires and Electronic Devices Including P-Type Zn Oxide Nanowires patent-application December 2011
Photovoltaic Cell and Method of Fabricating the Same patent-application July 2016
Optoelectronic device comprising microwires or nanowires patent August 2017

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