GaN-based threshold switching device and memory diode

Fu, Kai; Fu, Houqiang; Zhao, Yuji

Title: GaN-based threshold switching device and memory diode

Patent · Tue Dec 13 00:00:00 EST 2022

OSTI ID:1986928

Fu, Kai; Fu, Houqiang; Zhao, Yuji

A switching device including a GaN substrate; an unintentionally doped GaN layer on a first surface of the GaN substrate; a regrown unintentionally doped GaN layer on the unintentionally doped GaN layer; a regrowth interface between the unintentionally doped GaN layer and the regrown unintentionally doped GaN layer; a p-GaN layer on the regrown unintentionally doped GaN layer; a first electrode on the p-GaN layer; and a second electrode on a second surface of the GaN substrate.

View Patent

Cite

Export

Save

Research Organization:: Arizona State Univ., Tempe, AZ (United States)

Sponsoring Organization:: USDOE Advanced Research Projects Agency - Energy (ARPA-E); National Aeronautics and Space Administration (NASA)

DOE Contract Number:: 80NSSC17K0768; AR0000868

Assignee:: Arizona Board of Regents on Behalf of Arizona State University (Scottsdale, AZ)

Patent Number(s):: 11,527,573

Application Number:: 17/215,282

OSTI ID:: 1986928

Resource Relation:: Patent File Date: 03/29/2021

Country of Publication:: United States

Language:: English

References (28)

Reproducible bipolar resistive switching in entire nitride AlN/n-GaN metal-insulator-semiconductor device and its mechanism Chen, Yiren; Song, Hang; Jiang, Hong Applied Physics Letters, Vol. 105, Issue 19 https://doi.org/10.1063/1.4901747	journal	November 2014
High-Performance Metal-Insulator-Metal Tunnel Diode Selectors Govoreanu, Bogdan; Adelmann, Christoph; Redolfi, Augusto IEEE Electron Device Letters, Vol. 35, Issue 1 https://doi.org/10.1109/LED.2013.2291911	journal	January 2014
Chemical and structural properties of conducting nanofilaments in TiN/HfO₂-based resistive switching structures Calka, P.; Martinez, E.; Delaye, V. Nanotechnology, Vol. 24, Issue 8 https://doi.org/10.1088/0957-4484/24/8/085706	journal	February 2013
Comprehensive scaling study of NbO ₂ insulator-metal-transition selector for cross point array application Cha, Euijun; Park, Jaehyuk; Woo, Jiyong Applied Physics Letters, Vol. 108, Issue 15 https://doi.org/10.1063/1.4945367	journal	April 2016
Sub-30nm scaling and high-speed operation of fully-confined Access-Devices for 3D crosspoint memory based on mixed-ionic-electronic-conduction (MIEC) materials Virwani, K.; Burr, G. W.; Shenoy, R. S. 2012 International Electron Devices Meeting https://doi.org/10.1109/IEDM.2012.6478967	conference	December 2012
Method of Fabricating a Merged P-N Junction and Schottky Diode with Regrown Gallium Nitride Layer Kizilyalli, Isik C.; Bour, Dave P.; Prunty, Thomas R. https://doi.org/https://image-ppubs.uspto.gov/dirsearch-public/print/downloadPdf/20140312355 US Patent Application 13/866286; 20140312355	patent-application	October 2014
Highly-scalable novel access device based on Mixed Ionic Electronic conduction (MIEC) materials for high density phase change memory (PCM) arrays Gopalakrishnan, K.; Shenoy, R. S.; Rettner, C. T. 2010 Symposium on VLSI Technology https://doi.org/10.1109/VLSIT.2010.5556229	conference	June 2010
Memory effect of Al-rich AlN films synthesized with rf magnetron sputtering Liu, Y.; Chen, T. P.; Zhao, P. Applied Physics Letters, Vol. 87, Issue 3 https://doi.org/10.1063/1.2000337	journal	July 2005
Steep Slope Transistors with Threshold Switching Devices Huang, Xuanqi; Zhao, Yuji; Fang, Runchen https://doi.org/https://image-ppubs.uspto.gov/dirsearch-public/print/downloadPdf/20200227546 US Patent Application 16/739333; 20200227546	patent-application	July 2020
Resistive Random Access Memory (RRAM) Yu, Shimeng Synthesis Lectures on Emerging Engineering Technologies, Vol. 2, Issue 5 https://doi.org/10.2200/S00681ED1V01Y201510EET006	journal	March 2016
Notice of Violation of IEEE Publication Principles: Overview of Selector Devices for 3-D Stackable Cross Point RRAM Arrays Aluguri, Rakesh; Tseng, Tseung-Yuen IEEE Journal of the Electron Devices Society, Vol. 4, Issue 5 https://doi.org/10.1109/JEDS.2016.2594190	journal	September 2016
Atomic structure of conducting nanofilaments in TiO2 resistive switching memory Kwon, Deok-Hwang; Kim, Kyung Min; Jang, Jae Hyuck Nature Nanotechnology, Vol. 5, Issue 2 https://doi.org/10.1038/nnano.2009.456	journal	January 2010
Threshold Selector With High Selectivity and Steep Slope for Cross-Point Memory Array IEEE Electron Device Letters, Vol. 36, Issue 7 https://doi.org/10.1109/LED.2015.2430332	journal	July 2015
2-stack 1D-1R Cross-point Structure with Oxide Diodes as Switch Elements for High Density Resistance RAM Applications Lee, Myoung-Jae; Park, Youngsoo; Kang, Bo-Soo 2007 IEEE International Electron Devices Meeting https://doi.org/10.1109/IEDM.2007.4419061	conference	January 2007
High-voltage aluminum nitride (AIN) schottky-barrier diodes Zhao, Yuji; Fu, Houqiang https://doi.org/https://image-ppubs.uspto.gov/dirsearch-public/print/downloadPdf/10700218 US Patent Document 10,700,218	patent	June 2020
Simple Binary Ovonic Threshold Switching Material SiTe and Its Excellent Selector Performance for High-Density Memory Array Application Koo, Yunmo; Lee, Sangmin; Park, Seonggeon IEEE Electron Device Letters, Vol. 38, Issue 5 https://doi.org/10.1109/LED.2017.2685435	journal	May 2017
Nanoscale resistive memory with intrinsic diode characteristics and long endurance Kim, Kuk-Hwan; Hyun Jo, Sung; Gaba, Siddharth Applied Physics Letters, Vol. 96, Issue 5 https://doi.org/10.1063/1.3294625	journal	February 2010
Excellent threshold switching device (Ioff ∼ 1 pA) with atom-scale metal filament for steep slope (< 5 mV/dec), ultra low voltage (Vdd = 0.25 V) FET applications Lim, Seokjae; Yoo, Jongmyung; Song, Jeonghwan 2016 IEEE International Electron Devices Meeting (IEDM) https://doi.org/10.1109/IEDM.2016.7838543	conference	December 2016
Invited paper: Thin-film Ovonic threshold switch: Its operation and application in modern integrated circuits Czubatyj, Wally; Hudgens, Stephen J. Electronic Materials Letters, Vol. 8, Issue 2 https://doi.org/10.1007/s13391-012-2040-z	journal	April 2012
Self-rectifying and forming-free unipolar HfOx based-high performance RRAM built by fab-avaialbe materials Tran, X. A.; Gao, B.; Kang, J. F. 2011 International Electron Devices Meeting https://doi.org/10.1109/IEDM.2011.6131648	conference	December 2011
Threshold switching behavior of Ag-Si based selector device and hydrogen doping effect on its characteristics Yoo, Jongmyung; Woo, Jiyong; Song, Jeonghwan AIP Advances, Vol. 5, Issue 12 https://doi.org/10.1063/1.4938548	journal	December 2015
Annealing effect on the bipolar resistive switching characteristics of a Ti/Si3N4/n-GaN MIS device Chen, Y. R.; Li, Z. M.; Zhang, Z. W. Journal of Alloys and Compounds, Vol. 740 https://doi.org/10.1016/j.jallcom.2018.01.072	journal	April 2018
Electronic Device Using Group III Nitride Semiconductor and its Fabrication Method Hashimoto, Tadao; Ueda, Daisuke https://doi.org/https://image-ppubs.uspto.gov/dirsearch-public/print/downloadPdf/20180182882 US Patent Application 15/796715; 20180182882	patent-application	June 2018
Varistor-type bidirectional switch (JMAX>10⁷A/cm², selectivity∼10⁴) for 3D bipolar resistive memory arrays Lee, Wootae; Park, Jubong; Shin, Jungho 2012 Symposium on VLSI Technology (VLSIT) https://doi.org/10.1109/VLSIT.2012.6242449	conference	June 2012
Regenerable Resistive Switching in Silicon Oxide Based Nanojunctions Cavallini, Massimiliano; Hemmatian, Zahra; Riminucci, Alberto Advanced Materials, Vol. 24, Issue 9 https://doi.org/10.1002/adma.201104301	journal	February 2012
Flexible cation-based threshold selector for resistive switching memory integration Zhao, Xiaolong; Wang, Rui; Xiao, Xiangheng Science China Information Sciences, Vol. 61, Issue 6 https://doi.org/10.1007/s11432-017-9352-0	journal	April 2018
Memory selector devices and crossbar array design: a modeling-based assessment Chen, An Journal of Computational Electronics, Vol. 16, Issue 4 https://doi.org/10.1007/s10825-017-1059-7	journal	September 2017
Method and System for Formation of P-N Junctions in Gallium Nitride Based Electronics Bour, David P.; Printy, Thomas R.; Romano, Linda https://doi.org/https://image-ppubs.uspto.gov/dirsearch-public/print/downloadPdf/20130032814 US Patent Application 13/198666; 20130032814	patent-application	February 2013

Similar Records

GaN-based threshold switching device and memory diode

Patent · Tue Mar 30 00:00:00 EDT 2021 · OSTI ID:1986928

Fu, Kai; Fu, Houqiang; Zhao, Yuji

Threshold Switching and Memory Behaviors of Epitaxially Regrown GaN-on-GaN Vertical $p-n$ Diodes With High Temperature Stability

Journal Article · Tue Jan 08 00:00:00 EST 2019 · IEEE Electron Device Letters · OSTI ID:1986928

Fu, Kai; Fu, Houqiang; Huang, Xuanqi; +7 more

Investigation of GaN-on-GaN vertical p-n diode with regrown p-GaN by metalorganic chemical vapor deposition

Journal Article · Mon Dec 03 00:00:00 EST 2018 · Applied Physics Letters · OSTI ID:1986928

Fu, Kai; Fu, Houqiang; Liu, Hanxiao; +8 more

Title: GaN-based threshold switching device and memory diode

Citation Formats

References (28)

Similar Records

Related Subjects