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Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, Vol. 35, Issue 3
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Surface roughness generated by plasma etching processes of silicon
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Control of the Interface Between Electron-Hole and Electron-Ion Plasmas: Hybrid Semiconductor-Gas Phase Devices as a Gateway for Plasma Science
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Study on Chlorine Adsorbed Silicon Surface Using Soft-X-Ray Photoemission Spectroscopy
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Theory of Auger Neutralization of Ions at the Surface of a Diamond-Type Semiconductor
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Optical actinometry of Cl2, Cl, Cl+, and Ar+ densities in inductively coupled Cl2–Ar plasmas
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Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena, Vol. 32, Issue 3
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Surface processes in plasma-assisted etching environments
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Controlling VUV photon fluxes in pulsed inductively coupled Ar/Cl 2 plasmas and potential applications in plasma etching
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Quantum Efficiency of Silicon in the Vacuum Ultraviolet
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April 1964 |
In situ pulsed laser‐induced thermal desorption studies of the silicon chloride surface layer during silicon etching in high density plasmas of Cl2 and Cl2/O2 mixtures
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Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, Vol. 12, Issue 5
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September 1994 |
Surprising importance of photo-assisted etching of silicon in chlorine-containing plasmas
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Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, Vol. 30, Issue 2
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March 2012 |
Study of sidewall passivation and microscopic silicon roughness phenomena in chlorine-based reactive ion etching of silicon trenches
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Si etching in high-density SF6 plasmas for microfabrication: surface roughness formation
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June 2004 |
Fermi level pinning on Si[sub 0.83]Ge[sub 0.17] surface by inductively coupled plasma treatment
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Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, Vol. 23, Issue 2
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January 2005 |
Cl2 plasma etching of Si(100): Damaged surface layer studied by in situ spectroscopic ellipsometry
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Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, Vol. 15, Issue 3
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October 2015 |
Adsorbate-induced surface states and Fermi-level pinning at semiconductor surfaces
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September 1989 |
Surface Enhanced Photodissociation of Physisorbed Molecules
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Recombination coefficients for Cl on plasma-conditioned yttrium oxide chamber wall surfaces
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Linear internal inductively coupled plasma (ICP) source with magnetic fields for large area processing
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July 2003 |
Cl2 plasma etching of Si(100): Nature of the chlorinated surface layer studied by angle-resolved x-ray photoelectron spectroscopy
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Silicon doping effects in reactive plasma etching
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March 1986 |
Kinetic study of low energy argon ion-enhanced plasma etching of polysilicon with atomic/molecular chlorine
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Influence of doping on the etching of Si(111)
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Doping and crystallographic effects in Cl‐atom etching of silicon
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Reaction mechanisms for the photon-enhanced etching of semiconductors: An investigation of the UV-stimulated interaction of chlorine with Si(100)
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October 1986 |
Reactions of halogens with surfaces stimulated by VUV light
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Diagnostics of inductively coupled chlorine plasmas: Measurements of the neutral gas temperature
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Study of the structure in rf glow discharges in SiH 4 /H 2 by spatiotemporal optical emission spectroscopy: Influence of negative ions
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December 1990 |
Surface band-bending and Fermi-level pinning in doped Si observed by Kelvin force microscopy
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March 2014 |
Absolute measurement of vacuum ultraviolet photon flux in an inductively coupled plasma using a Au thin film
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March 2022 |
Overview of atomic layer etching in the semiconductor industry
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Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, Vol. 33, Issue 2
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March 2015 |
Rate constants for the reaction of Cl atoms with intrinsic andn+‐doped polycrystalline silicon
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January 1991 |
Composition of trench sidewalls and bottoms for SiO2-masked Si(100) etched in Cl2 plasmas
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Effects of O2 addition on in-plasma photo-assisted etching of Si with chlorine
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September 2020 |
Molecular-beam study of the plasma-surface kinetics of silicon dioxide and photoresist etching with chlorine
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Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, Vol. 19, Issue 4
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Fluid model simulations of a 13.56‐MHz rf discharge: Time and space dependence of rates of electron impact excitation
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July 1987 |
Laser-induced chemical etching of silicon in chlorine atmosphere
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Photo-assisted etching of silicon in chlorine- and bromine-containing plasmas
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May 2014 |
Photon-stimulated desorption of F− ions from CF3Cl adsorbed on Si(111)-7×7
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June 2004 |
Diagnostics of inductively coupled chlorine plasmas: Measurement of Cl2 and Cl number densities
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December 2000 |
Insights into the mechanism of in-plasma photo-assisted etching using optical emission spectroscopy
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Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, Vol. 34, Issue 6
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November 2016 |
Phase resolved optical emission spectroscopy: a non-intrusive diagnostic to study electron dynamics in capacitive radio frequency discharges
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March 2010 |
Ab Initio Study of Hot Carriers in the First Picosecond after Sunlight Absorption in Silicon
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June 2014 |
Pinning of the Fermi level close to the valence-band top by chlorine adsorbed on cleaved GaAs(110) surfaces
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July 1987 |
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Theory of the oxidation of metals
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Evidence for anti-synergism between ion-assisted etching and in-plasma photoassisted etching of silicon in a high-density chlorine plasma
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March 2020 |
Photo-Excited Etching of Poly-Crystalline and Single-Crystalline Silicon in Cl2Atmosphere
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January 1985 |
Light-induced dry etching of semiconductors in the vacuum ultraviolet
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June 1998 |
Efficient dry etching of Si with vacuum ultraviolet light and XeF2in a buffer gas
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Abrupt transitions in species number densities and plasma parameters in a CH3F/O2inductively coupled plasma
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January 2013 |
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Reaction of silicon with chlorine and ultraviolet laser induced chemical etching mechanisms
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Control of ion energy distributions using a pulsed plasma with synchronous bias on a boundary electrode
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August 2011 |
The mechanism of formation of microneedles on the silicon surface in fluorinated plasma via the cyclic etching-deposition process
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September 2008 |
Self‐Diffusion in Argon
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Predictions of ion energy distributions and radical fluxes in radio frequency biased inductively coupled plasma etching reactors
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Quantitative VUV spectroscopy of Cl2
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