skip to main content
OSTI.GOV title logo U.S. Department of Energy
Office of Scientific and Technical Information

Title: Nonrad: Computing nonradiative capture coefficients from first principles

Journal Article · · Computer Physics Communications

Point defects in semiconductor crystals provide a means for carriers to recombine nonradiatively. This recombination process impacts the performance of devices. We present the Nonrad code that implements the first-principles approach of Alkauskas et al. (2014) [8] for the evaluation of nonradiative capture coefficients based on a quantum-mechanical description of the capture process. An approach for evaluating electron-phonon coupling within the projector augmented wave formalism is presented. We also show that the common procedure of replacing Dirac delta functions with Gaussians can introduce errors into the resulting capture rate, and implement an alternative scheme to properly account for vibrational broadening. Finally, we assess the accuracy of using an analytic approximation to the Sommerfeld parameter by comparing with direct numerical evaluation.

Research Organization:
Univ. of California, Santa Barbara, CA (United States)
Sponsoring Organization:
USDOE Office of Science (SC), Basic Energy Sciences (BES)
Grant/Contract Number:
SC0010689; AC02-05CH11231
OSTI ID:
1977040
Alternate ID(s):
OSTI ID: 1798541
Journal Information:
Computer Physics Communications, Vol. 267, Issue C; ISSN 0010-4655
Publisher:
ElsevierCopyright Statement
Country of Publication:
United States
Language:
English

References (24)

Application of the Method of Generating Function to Radiative and Non-Radiative Transitions of a Trapped Electron in a Crystal journal February 1955
Projector augmented-wave method journal December 1994
Theory of inelastic multiphonon scattering and carrier capture by defects in semiconductors: Application to capture cross sections journal December 2015
Relationships between the nonradiative multiphonon carrier-capture properties of deep charged and neutral centres in semiconductors journal December 1976
Electrostatic interactions between charged defects in supercells journal December 2010
Theory of light absorption and non-radiative transitions in F-centres journal December 1950
Non-radiative transitions in semiconductors journal December 1981
Fully Ab Initio Finite-Size Corrections for Charged-Defect Supercell Calculations journal January 2009
Efficient iterative schemes for ab initio total-energy calculations using a plane-wave basis set journal October 1996
Band parameters for nitrogen-containing semiconductors journal September 2003
New expressions for the overlap integral of two linear harmonic oscillator wavefunctions journal December 1982
First-principles calculations for point defects in solids journal March 2014
Iron as a source of efficient Shockley-Read-Hall recombination in GaN journal October 2016
Calculation of nonradiative multiphonon capture coefficients and ionization rates for neutral centres according to the static coupling scheme: I. Theory journal March 1975
Electron-phonon interactions using the projector augmented-wave method and Wannier functions journal May 2020
Finite-displacement computation of the electron-phonon interaction within the projector augmented-wave method journal November 2019
Tutorial: Defects in semiconductors—Combining experiment and theory journal May 2016
First-principles theory of nonradiative carrier capture via multiphonon emission journal August 2014
Erratum: “Hybrid functionals based on a screened Coulomb potential” [J. Chem. Phys. 118, 8207 (2003)] journal June 2006
Mean-Value Point in the Brillouin Zone journal June 1973
Nonradiative capture and recombination by multiphonon emission in GaAs and GaP journal January 1977
Crystal structure refinement of AlN and GaN journal September 1977
Comment on “Comparative study of ab initio nonradiative recombination rate calculations under different formalisms” journal February 2018
Python Materials Genomics (pymatgen): A robust, open-source python library for materials analysis journal February 2013