Progress toward picosecond on-chip magnetic memory

Polley, Debanjan; Pattabi, Akshay; Chatterjee, Jyotirmoy; Mondal, Sucheta; Jhuria, Kaushalya; Singh, Hanuman; Gorchon, Jon; Bokor, Jeffrey

doi:10.1063/5.0083897

Title: Progress toward picosecond on-chip magnetic memory

Journal Article · Mon Apr 04 00:00:00 EDT 2022 · Applied Physics Letters

DOI:https://doi.org/10.1063/5.0083897· OSTI ID:1962014

^[1];

^[2];

^[3];

^[2]; Jhuria, Kaushalya ^[4]; Singh, Hanuman ^[2]; Gorchon, Jon ^[5]; Bokor, Jeffrey ^[1]

Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States); Univ. of California, Berkeley, CA (United States)
Univ. of California, Berkeley, CA (United States)
Fraunhofer Institute for Photonic Microsystems (IPMS) (Germany)
Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States); Universite de Lorraine (France)
Universite de Lorraine (France)

We offer a perspective on the prospects of ultrafast spintronics and opto-magnetism as a pathway to high-performance, energy-efficient, and non-volatile embedded memory in digital integrated circuit applications. Conventional spintronic devices, such as spin-transfer-torque magnetic-resistive random-access memory (STT-MRAM) and spin–orbit torque MRAM, are promising due to their non-volatility, energy-efficiency, and high endurance. STT-MRAMs are now entering into the commercial market; however, they are limited in write speed to the nanosecond timescale. Improvement in the write speed of spintronic devices can significantly increase their usefulness as viable alternatives to the existing CMOS-based devices. In this article, we discuss recent studies that advance the field of ultrafast spintronics and opto-magnetism. An optimized ferromagnet–ferrimagnet exchange-coupled magnetic stack, which can serve as the free layer of a magnetic tunnel junction (MTJ), can be optically switched in as fast as ∼3 ps. Integration of ultrafast magnetic switching of a similar stack into an MTJ device has enabled electrical readout of the switched state using a relatively larger tunneling magnetoresistance ratio. Purely electronic ultrafast spin–orbit torque induced switching of a ferromagnet has been demonstrated using ∼6 ps long charge current pulses. We conclude our Perspective by discussing some of the challenges that remain to be addressed to accelerate ultrafast spintronics technologies toward practical implementation in high-performance digital information processing systems.

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Research Organization:: Lawrence Berkeley National Laboratory (LBNL), Berkeley, CA (United States)

Sponsoring Organization:: USDOE Office of Science (SC), Basic Energy Sciences (BES). Materials Sciences & Engineering Division; USDOE

Grant/Contract Number:: AC02-05CH11231; AC02-05-CH11231

OSTI ID:: 1962014

Alternate ID(s):: OSTI ID: 1860961

Journal Information:: Applied Physics Letters, Vol. 120, Issue 14; ISSN 0003-6951

Publisher:: American Institute of Physics (AIP)Copyright Statement

Country of Publication:: United States

Language:: English

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magnetic tunnel junctions
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