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Title: Insight to the Duration of 120 °C Baking on the Performance of SRF Niobium Cavities

Journal Article · · IEEE Transactions on Applied Superconductivity
 [1]; ORCiD logo [2]
  1. Old Dominion Univ., Norfolk, VA (United States)
  2. Thomas Jefferson National Accelerator Facility (TJNAF), Newport News, VA (United States)

Low-temperature baking at 100 °C - 140 °C in ultra-high vacuum for several hours is the final cavity processing technique to achieve the highest accelerating gradient cavity by eliminating the high field Q-slope, typically on cavities made of high purity fine grain niobium and subjected to electropolishing. The temperature and duration of baking control the onset of the high field Q-slope and overall quality factor over the baseline measurements. The increase in quality factor is generally related to the reduction in the temperature-dependent surface resistance, which refers to BCS surface resistance due to the reduction in the electronic mean free path and elimination of high field Q-slope is still being actively investigated. Here, we present the results of a series of measurements on 1.3 GHz TESLA shape single-cell cavities with successive low-temperature baking at 120 °C up to 96 hours. The rf loss related to the trapping of residual magnetic field refer to flux trapping sensitivity was measured with respect to the duration of 120 °C bake.

Research Organization:
Thomas Jefferson National Accelerator Facility (TJNAF), Newport News, VA (United States)
Sponsoring Organization:
USDOE Office of Science (SC), Nuclear Physics (NP); USDOE Office of Science (SC), High Energy Physics (HEP)
Grant/Contract Number:
AC05-06OR23177; SC0009960
OSTI ID:
1924790
Report Number(s):
JLAB-ACC-22-3721; DOE/OR/23177-5615; TRN: US2312535
Journal Information:
IEEE Transactions on Applied Superconductivity, Vol. 33, Issue 3; ISSN 1051-8223
Publisher:
IEEECopyright Statement
Country of Publication:
United States
Language:
English

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  • The Role of Oxygen Concentration in Enabling High Gradients in Niobium SRF Cavities https://doi.org/10.2172/1825287
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