Robust low-temperature (350 °C) ferroelectric Hf0.5Zr0.5O2 fabricated using anhydrous H2O2 as the ALD oxidant

Jung, Yong Chan; Kim, Jin-Hyun; Hernandez-Arriaga, Heber; Mohan, Jaidah; Hwang, Su Min; Le, Dan N.; Sahota, Akshay; Kim, Harrison Sejoon; Kim, Kihyun; Choi, Rino; Nam, Chang-Yong; Alvarez, Daniel; Spiegelman, Jeffrey; Kim, Si Joon; Kim, Jiyoung

doi:10.1063/5.0126695

Title: Robust low-temperature (350 °C) ferroelectric Hf_0.5Zr_0.5O₂ fabricated using anhydrous H₂O₂ as the ALD oxidant

Journal Article · Fri Nov 11 00:00:00 EST 2022 · Applied Physics Letters

DOI:https://doi.org/10.1063/5.0126695· OSTI ID:1923328

^[1];

^[1]; Hernandez-Arriaga, Heber ^[1]; Mohan, Jaidah ^[1];

^[1];

^[1]; Kim, Harrison Sejoon ^[1]; Kim, Kihyun ^[2];

^[3];

^[4];

^[5]; Spiegelman, Jeffrey ^[5];

^[6];

^[1]

University of Texas at Dallas, Richardson, TX (United States)
University of Texas at Dallas, Richardson, TX (United States); Inha University, Incheon (Korea, Republic of)
Inha University, Incheon (Korea, Republic of)
Brookhaven National Laboratory (BNL), Upton, NY (United States). Center for Functional Nanomaterials (CFN)
RASIRC Inc., San Diego, CA (United States)
Kangwon National University, Chuncheon (Korea, Republic of)

Here, in this Letter, the robust ferroelectric properties of low-temperature (350 °C) Hf_0.5Zr_0.5O₂ (HZO) films are investigated. We demonstrate that the lower crystallization temperature of HZO films originates from a densified film deposition with an anhydrous H₂O₂ oxidant in the atomic layer deposition process. As a consequence of this densification, H₂O₂-based HZO films showed completely crystallinity with fewer defects at a lower annealing temperature of 350 °C. This reduction in the crystallization temperature additionally suppresses the oxidation of TiN electrodes, thereby improving device reliability. The low-temperature crystallization process produces an H₂O₂-based HZO capacitor with a high remanent polarization ( P_r), reduced leakage current, high breakdown voltage, and better endurance. Furthermore, while an O₃-based HZO capacitor requires wake-up cycling to achieve stable P_r, the H₂O₂-based HZO capacitor demonstrates a significantly reduced wake-up nature. Anhydrous H₂O₂ oxidant enables the fabrication of a more reliable ferroelectric HZO device using a low process thermal budget (350 °C).

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Research Organization:: Brookhaven National Laboratory (BNL), Upton, NY (United States)

Sponsoring Organization:: USDOE Office of Science (SC), Basic Energy Sciences (BES)

Grant/Contract Number:: SC0012704

OSTI ID:: 1923328

Report Number(s):: BNL-223935-2023-JAAM; TRN: US2312783

Journal Information:: Applied Physics Letters, Vol. 121, Issue 22; ISSN 0003-6951

Publisher:: American Institute of Physics (AIP)Copyright Statement

Country of Publication:: United States

Language:: English

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Title: Robust low-temperature (350 °C) ferroelectric Hf_0.5Zr_0.5O₂ fabricated using anhydrous H₂O₂ as the ALD oxidant