Sputtered indium tin oxide as a recombination layer formed on the tunnel oxide/poly-Si passivating contact enabling the potential of efficient monolithic perovskite/Si tandem solar cells

Yoon, Woojun; Scheiman, David; Ok, Young-Woo; Song, Zhaoning; Chen, Cong; Jernigan, Glenn; Rohatgi, Ajeet; Yan, Yanfa; Jenkins, Phillip

doi:10.1016/j.solmat.2020.110482

Title: Sputtered indium tin oxide as a recombination layer formed on the tunnel oxide/poly-Si passivating contact enabling the potential of efficient monolithic perovskite/Si tandem solar cells

Journal Article · Mon Mar 02 00:00:00 EST 2020 · Solar Energy Materials and Solar Cells

DOI:https://doi.org/10.1016/j.solmat.2020.110482· OSTI ID:1893734

Yoon, Woojun ^[1]; Scheiman, David ^[1]; Ok, Young-Woo ^[2]; Song, Zhaoning ^[3]; Chen, Cong ^[3]; Jernigan, Glenn ^[1]; Rohatgi, Ajeet ^[2]; Yan, Yanfa ^[3]; Jenkins, Phillip ^[1]

Naval Research Lab., Washington, DC (United States)
Georgia Institute of Technology, Atlanta, GA (United States)
Univ. of Toledo, OH (United States)

We focus on utilizing sputtered indium tin oxide (ITO) as a recombination layer, having low junction damage to an n-type silicon solar cell with a front-side tunnel oxide passivating electron contact, thereby enabling the development of a high efficiency monolithic perovskite/Si tandem device. High transparency and low resistivity ITO films are deposited via low power DC magnetron sputtering at room temperature onto a front-side thin SiO_x/n⁺ poly-Si contact in a complete Cz n-Si cell with a back-side Al₂O₃/SiN_x passivating boron-diffused p⁺-emitter on a random pyramid textured surface. We report the cell characteristics before and after ITO sputtering, and we find a cure at 250 °C in air is highly effective at mitigating any sputtering induced damage. Our ITO coated sample resulted in an implied open-circuit voltage (iV_oc) of 684.7 ± 11.3 mV with the total saturation current density of 49.2 ± 14.8 fA/cm², an implied fill factor (iFF) of 81.9 ± 0.8%, and a contact resistivity in the range of 60 mΩ-cm² to 90 mΩ-cm². After formation of a local Ag contact to the rear emitter and sputtered ITO film as the front-side contact without grid fingers, the pseudo-efficiency of 20.2 ± 0.5% was obtained with the V_oc of 670.4 ± 7 mV and pseudo FF of 77.3 ± 1.3% under simulated one sun with the calculated short-circuit current density of 30.9 mA/cm² from the measured external quantum efficiency. Furthermore, our modelling result shows that efficiency exceeding 25% under one sun is practically achievable in perovskite/Si tandem configuration using the ITO recombination layer connecting a perovskite top cell and a poly-Si bottom cell.

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Research Organization:: Georgia Institute of Technology, Atlanta, GA (United States)

Sponsoring Organization:: USDOE Office of Energy Efficiency and Renewable Energy (EERE), Renewable Power Office. Solar Energy Technologies Office; US Department of the Navy, Office of Naval Research (ONR)

Grant/Contract Number:: EE0007554; N0001419WX00460

OSTI ID:: 1893734

Alternate ID(s):: OSTI ID: 1893905

Journal Information:: Solar Energy Materials and Solar Cells, Vol. 210; ISSN 0927-0248

Publisher:: ElsevierCopyright Statement

Country of Publication:: United States

Language:: English

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Title: Sputtered indium tin oxide as a recombination layer formed on the tunnel oxide/poly-Si passivating contact enabling the potential of efficient monolithic perovskite/Si tandem solar cells

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