Two-junction photovoltaic devices
Patent
·
OSTI ID:1893064
The present disclosure relates to a photovoltaic (PV) device that includes a first junction constructed with a first alloy and having a bandgap between about 1.0 eV and about 1.5 eV, and a second junction constructed with a second alloy and having a bandgap between about 0.9 eV and about 1.3 eV, where the first alloy includes III-V elements, the second alloy includes III-V elements, and the PV device is configured to operate in a thermophotovoltaic system having an operating temperature between about 1500° C. and about 3000° C.
- Research Organization:
- National Renewable Energy Laboratory (NREL), Golden, CO (United States)
- Sponsoring Organization:
- USDOE
- DOE Contract Number:
- AC36-08GO28308
- Assignee:
- Alliance for Sustainable Energy, LLC (Golden, CO); Georgia Tech Research Corporation (Atlanta, GA)
- Patent Number(s):
- 11,367,802
- Application Number:
- 16/269,848
- OSTI ID:
- 1893064
- Resource Relation:
- Patent File Date: 02/07/2019
- Country of Publication:
- United States
- Language:
- English
Similar Records
Two-junction photovoltaic devices
III-V/Active-Silicon Integration for Low-Cost High-Performance Concentrator Photovoltaics
Final Report: Vapor Transport Deposition for Thin Film III-V Photovoltaics
Patent
·
Tue Oct 03 00:00:00 EDT 2023
·
OSTI ID:1893064
+1 more
III-V/Active-Silicon Integration for Low-Cost High-Performance Concentrator Photovoltaics
Technical Report
·
Fri Dec 22 00:00:00 EST 2017
·
OSTI ID:1893064
Final Report: Vapor Transport Deposition for Thin Film III-V Photovoltaics
Technical Report
·
Wed Feb 10 00:00:00 EST 2016
·
OSTI ID:1893064
+1 more