GaN/AlGaN 2DEGs in the quantum regime: Magneto-transport and photoluminescence to 60 tesla
- Los Alamos National Lab. (LANL), Los Alamos, NM (United States)
- Cornell Univ., Ithaca, NY (United States)
Here, using high magnetic fields up to 60 T, we report magneto-transport and photoluminescence (PL) studies of a two-dimensional electron gas (2DEG) in a GaN/AlGaN heterojunction grown by molecular-beam epitaxy. Transport measurements demonstrate that the quantum limit can be exceeded (Landau level filling factor v<1) and show evidence for the v=2/3 fractional quantum Hall state. Simultaneous optical and transport measurements reveal synchronous quantum oscillations of both the PL intensity and the longitudinal resistivity in the integer quantum Hall regime. PL spectra directly reveal the dispersion of occupied Landau levels in the 2DEG and, therefore, the electron mass. These results demonstrate the utility of high (pulsed) magnetic fields for detailed measurements of quantum phenomena in high-density 2DEGs.
- Research Organization:
- Los Alamos National Laboratory (LANL), Los Alamos, NM (United States)
- Sponsoring Organization:
- USDOE; National Science Foundation (NSF); US Department of the Navy, Office of Naval Research (ONR)
- Grant/Contract Number:
- 89233218CNA000001; DMR-1644779; N00014-20-1-2126; N00014-20-1-2176; 1839196; 1719875; DMR-1752784
- OSTI ID:
- 1875797
- Report Number(s):
- LA-UR-20-27565; TRN: US2307258
- Journal Information:
- Applied Physics Letters, Vol. 117, Issue 26; ISSN 0003-6951
- Publisher:
- American Institute of Physics (AIP)Copyright Statement
- Country of Publication:
- United States
- Language:
- English
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