Dramatic effect of electrode type on tunnel junction based molecular spintronic devices

Mutunga, Eva; D'Angelo, Christopher; Grizzle, Andrew; Lamberti, Vincent; Tyagi, Pawan

doi:10.1016/j.orgel.2022.106526

Title: Dramatic effect of electrode type on tunnel junction based molecular spintronic devices

Journal Article · Fri Apr 15 00:00:00 EDT 2022 · Organic Electronics

DOI:https://doi.org/10.1016/j.orgel.2022.106526· OSTI ID:1867611

Mutunga, Eva ^[1]; D'Angelo, Christopher ^[1]; Grizzle, Andrew ^[1];

^[2];

^[1]

University of the District of Columbia, Washington, DC (United States)
Y-12 National Security Complex, Oak Ridge, TN (United States)

A new class of molecular spintronic devices can be fabricated by chemically bonding magnetic molecular channels to the electrodes of a prefabricated tunnel junction with exposed side edges. Prior experimental studies showed that the cyanide-bridged octametallic molecular cluster, [(pzTp)FeIII(CN)3]4[NiII(L)]4¬[O3SCF3]4 [(pzTp) = tetra(pyrazol-1-yl)borate; L = 1-S(acetyl)tris(pyrazolyl)decane] molecule impact depended on the type of metallic electrodes used in the tunnel junction testbed. Experimental magnetization and transport studies showed a dramatic difference in molecule response on tunnel junctions with different combinations of metallic electrodes. Transport via paramagnetic molecular channels on a tunnel junction involving paramagnetic and ferromagnetic metal electrodes was dramatically different than the suppressed current state observed on tunnel junctions involving two ferromagnetic electrodes. We conducted theoretical studies to understand the experimental data and explore a wide range of electrode materials on tunnel junction-based molecular spintronics devices (TJMSD). Here, we report a Monte Carlo simulation study that focuses on understanding the effect of electrodes on the magnetic and physical properties of TJMSD. A 3D Heisenberg model of cross-junction-shaped TJMSD was used for the simulation study. We studied the effects of ferromagnetic, paramagnetic, and antiferromagnetic electrode materials. This study provides insights for designing and understanding futuristic molecular spintronics devices.

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Research Organization:: University of the District of Columbia, Washington, DC (United States); Oak Ridge National Laboratory (ORNL), Oak Ridge, TN (United States); Oak Ridge Y-12 Plant (Y-12), Oak Ridge, TN (United States)

Sponsoring Organization:: USDOE National Nuclear Security Administration (NNSA); National Science Foundation (NSF)

Grant/Contract Number:: NA0003945; HRD-1914751; FOA-0003945; NA0001942

OSTI ID:: 1867611

Alternate ID(s):: OSTI ID: 1880016; OSTI ID: 1961713; OSTI ID: 2281188

Journal Information:: Organic Electronics, Vol. 106; ISSN 1566-1199

Publisher:: ElsevierCopyright Statement

Country of Publication:: United States

Language:: English

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Title: Dramatic effect of electrode type on tunnel junction based molecular spintronic devices

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