X-ray free-electron laser based dark-field X-ray microscopy: a simulation-based study

Holstad, Theodor Secanell; Ræder, Trygve Magnus; Carlsen, Mads; Bergbäck Knudsen, Erik; Dresselhaus-Marais, Leora; Haldrup, Kristoffer; Simons, Hugh; Nielsen, Martin Meedom; Poulsen, Henning Friis

doi:10.1107/s1600576721012760

Title: X-ray free-electron laser based dark-field X-ray microscopy: a simulation-based study

Journal Article · Tue Feb 01 00:00:00 EST 2022 · Journal of Applied Crystallography (Online)

DOI:https://doi.org/10.1107/s1600576721012760· OSTI ID:1856259

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Technical Univ. of Denmark, Lyngby (Denmark)
Lawrence Livermore National Lab. (LLNL), Livermore, CA (United States); Stanford Univ., CA (United States); SLAC National Accelerator Lab., Menlo Park, CA (United States)

Dark-field X-ray microscopy (DFXM) is a nondestructive full-field imaging technique providing three-dimensional mapping of microstructure and local strain fields in deeply embedded crystalline elements. This is achieved by placing an objective lens in the diffracted beam, giving a magnified projection image. So far, the method has been applied with a time resolution of milliseconds to hours. In this work, the feasibility of DFXM at the picosecond time scale using an X-ray free-electron laser source and a pump–probe scheme is considered. Thermomechanical strain-wave simulations are combined with geometrical optics and wavefront propagation optics to simulate DFXM images of phonon dynamics in a diamond single crystal. Using the specifications of the XCS instrument at the Linac Coherent Light Source as an example results in simulated DFXM images clearly showing the propagation of a strain wave.

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Research Organization:: SLAC National Accelerator Lab., Menlo Park, CA (United States)

Sponsoring Organization:: USDOE; Villum Foundation; European Research Council (ERC); Danish Agency for Science and Higher Education

Grant/Contract Number:: AC02-76SF00515; AC52-07NA27344; 00028346; 885022; 8144-00002B

OSTI ID:: 1856259

Journal Information:: Journal of Applied Crystallography (Online), Vol. 55, Issue 1; ISSN 1600-5767

Publisher:: International Union of CrystallographyCopyright Statement

Country of Publication:: United States

Language:: English

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