Electron and hole mobility of rutile GeO2 from first principles: An ultrawide-bandgap semiconductor for power electronics
- University of Michigan, Ann Arbor (United States). Dept. of Materials Science and Engineering
Rutile germanium dioxide (r-GeO2) is a recently predicted ultrawide-bandgap semiconductor with potential applications in high-power electronic devices, for which the carrier mobility is an important material parameter that controls the device efficiency. We apply first-principles calculations based on density functional and density functional perturbation theory to investigate carrier-phonon coupling in r-GeO2 and predict its phonon-limited electron and hole mobilities as a function of temperature and crystallographic orientation. The calculated carrier mobilities at 300 K are cm2 V–1 s–1, cm2 V–1 s–1, cm2 V–1 s–1, and cm2 V–1 s–1. At room temperature, carrier scattering is dominated by the low-frequency polar-optical phonon modes. The predicted Baliga figure of merit of n-type r-GeO2 surpasses several incumbent semiconductors such as Si, SiC, GaN, and β-Ga2O3, demonstrating its superior performance in high-power electronic devices.
- Research Organization:
- Univ. of Texas, Austin, TX (United States); Krell Institute, Ames, IA (United States); Univ. of California, Oakland, CA (United States)
- Sponsoring Organization:
- USDOE Office of Science (SC), Basic Energy Sciences (BES); National Science Foundation (NSF)
- Grant/Contract Number:
- SC0020129; SC0020347; AC02-05CH11231; DGE-1256260
- OSTI ID:
- 1853467
- Alternate ID(s):
- OSTI ID: 1706205
- Journal Information:
- Applied Physics Letters, Vol. 117, Issue 18; ISSN 0003-6951
- Publisher:
- American Institute of Physics (AIP)Copyright Statement
- Country of Publication:
- United States
- Language:
- English
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