Incorporation of GTR (generation–transport–recombination) in semiconductor simulations

Muneer, Sadid; Bakan, Gokhan; Gokirmak, Ali; Silva, Helena

doi:10.1063/5.0037411

Title: Incorporation of GTR (generation–transport–recombination) in semiconductor simulations

Journal Article · Fri Feb 05 00:00:00 EST 2021 · Journal of Applied Physics

DOI:https://doi.org/10.1063/5.0037411· OSTI ID:1850892

^[1];

^[2]; Gokirmak, Ali ^[3];

^[3]

Univ. of Connecticut, Storrs, CT (United States). Dept. of Electrical and Computer Engineering; United International Univ., Dhaka (Bangladesh). Dept. of Electrical and Electronic Engineering
Univ. of Manchester (United Kingdom). National Graphene Inst.
Univ. of Connecticut, Storrs, CT (United States). Dept. of Electrical and Computer Engineering

With the emergence of phase change memory, where the devices experience extreme thermal gradients (~100 K/nm) during transitions between low and high resistive states, the study of thermoelectric effects at small scales becomes particularly relevant. We had earlier observed asymmetric melting of self-heated nano-crystalline silicon micro-wires, where current densities of ~10⁷ A/cm² were forced through the wires by 1 μs, ~30 V pulses. The extreme asymmetry can be explained by the generation of considerable amount of minority carriers, transport under the electric field, and recombination downstream, a heat transfer process we termed as generation–transport–recombination, which is in opposite direction of the electronic-convective heat carried by the majority carriers. Here, we present a full semiconductor physics treatment of this carrier-lattice heat transport mechanism and the contribution of the minority carriers on the evolution of the melt–solid interface, which can be applied to various high-temperature electronic devices.

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Research Organization:: Univ. of Connecticut, Storrs, CT (United States)

Sponsoring Organization:: USDOE Office of Science (SC), Basic Energy Sciences (BES)

Grant/Contract Number:: SC0005038

OSTI ID:: 1850892

Alternate ID(s):: OSTI ID: 1970560

Journal Information:: Journal of Applied Physics, Vol. 129, Issue 5; ISSN 0021-8979

Publisher:: American Institute of Physics (AIP)Copyright Statement

Country of Publication:: United States

Language:: English

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Title: Incorporation of GTR (generation–transport–recombination) in semiconductor simulations

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