Midgap levels in both n- and p-type 4H–SiC epilayers investigated by deep level transient spectroscopy
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March 2005 |
Native point defects and carbon clusters in 4H-SiC: A hybrid functional study
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March 2019 |
4H-SiC Schottky diode arrays for X-ray detection
- Lioliou, G.; Chan, H. K.; Gohil, T.
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Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, Vol. 840
https://doi.org/10.1016/j.nima.2016.10.002
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December 2016 |
Electrically active defects in n -type 4H–silicon carbide grown in a vertical hot-wall reactor
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April 2003 |
Comparison of threshold displacement energies in β-SiC determined by classical potentials and ab initio calculations
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April 2005 |
Maskless random antireflective nanotexturing of single crystal SiC
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July 2019 |
High-Performance 4H-SiC Schottky Photodiode With Semitransparent Grid-Electrode for EUV Detection
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July 2020 |
Radiation detection using fully depleted 50 μ m thick Ni/n-4H-SiC epitaxial layer Schottky diodes with ultra-low concentration of Z 1 / 2 and E H 6 / 7 deep defects
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September 2020 |
Statistics of the Recombinations of Holes and Electrons
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September 1952 |
Hard X-ray and -ray spectroscopy at high temperatures using a COTS SiC photodiode
- Bodie, C. S.; Lioliou, G.; Barnett, A. M.
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Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, Vol. 985
https://doi.org/10.1016/j.nima.2020.164663
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January 2021 |
The effects of large signals on charge collection in radiation detectors: Application to amorphous selenium detectors
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June 2006 |
Zum Mechanismus des lichtelektrischen Prim�rstromes in isolierenden Kristallen
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March 1932 |
Defects as qubits in and
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July 2015 |
Thermal and radiation response of 4H–SiC Schottky diodes with direct-write electrical contacts
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June 2020 |
Silicon carbide detectors for sub-GeV dark matter
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April 2021 |
Thick 4H-SiC epitaxial detectors for high-resolution radiation detection in harsh environment
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conference
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September 2020 |
Morphological features related to micropipe closing in 4H-SiC
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August 2005 |
Demonstration of 4H-SiC JFET Digital ICs Across 1000°C Temperature Range without Change to Input Voltages
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July 2019 |
SRIM – The stopping and range of ions in matter (2010)
- Ziegler, James F.; Ziegler, M. D.; Biersack, J. P.
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Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, Vol. 268, Issue 11-12
https://doi.org/10.1016/j.nimb.2010.02.091
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June 2010 |
Low Energy X-Ray and $\gamma$-Ray Detectors Fabricated on n-Type 4H-SiC Epitaxial Layer
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August 2013 |
Poole-Frenkel-effect as dominating current mechanism in thin oxide films—An illusion?!
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June 2015 |
First-principles study of electronic and diffusion properties of intrinsic defects in 4H-SiC
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February 2020 |
Performance of bulk SiC radiation detectors
- Cunningham, W.; Gouldwell, A.; Lamb, G.
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Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, Vol. 487, Issue 1-2
https://doi.org/10.1016/S0168-9002(02)00941-5
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July 2002 |
Electrical transport in n -type 4H silicon carbide
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August 2001 |
Silicon carbide detector for laser-generated plasma radiation
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May 2013 |
Influence of epitaxial growth and substrate-induced defects on the breakdown of 4H–SiC Schottky diodes
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May 2000 |
Electrical Impact of SiC Structural Crystal Defects on High Electric Field Devices
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May 2000 |
Correlation of Deep Levels With Detector Performance in 4H-SiC Epitaxial Schottky Barrier Alpha Detectors
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August 2014 |
Analysis of temperature-dependent barrier heights in erbium-silicided Schottky diodes
- Jun, Myungsim; Jang, Moongyu; Kim, Yarkeon
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Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, Vol. 26, Issue 1
https://doi.org/10.1116/1.2825172
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January 2008 |
Deep‐level transient spectroscopy: A new method to characterize traps in semiconductors
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July 1974 |
Characterization of deep electron traps in 4H-SiC Junction Barrier Schottky rectifiers
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April 2014 |
Photoelectrochemical etching to fabricate single-crystal SiC MEMS for harsh environments
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February 2011 |
Resolving the EH6/7 level in 4H-SiC by Laplace-transform deep level transient spectroscopy
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April 2013 |
Low-Noise Techniques in Detectors
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December 1988 |
The Evolution of Silicon Wafer Cleaning Technology
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January 1990 |
Experimental determination of electron-hole pair creation energy in 4H-SiC epitaxial layer: An absolute calibration approach
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January 2013 |
Charge collection efficiency in the presence of non-uniform carrier drift mobilities and lifetimes in photoconductive detectors
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September 2020 |
Electron transport at metal-semiconductor interfaces: General theory
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June 1992 |
High resolution alpha particle detectors based on 4H-SiC epitaxial layer
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April 2015 |
Characterization of silicon carbide and diamond detectors for neutron applications
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September 2017 |
Electrical and noise properties of proton irradiated 4H-SiC Schottky diodes
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January 2018 |
X-$\gamma$ Ray Spectroscopy With Semi-Insulating 4H-Silicon Carbide
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April 2013 |
Silicon Carbide Microstrip Radiation Detectors
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November 2019 |
Epitaxial silicon carbide for X-ray detection
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April 2001 |
4H-SiC Schottky diodes with Ni Si contacts for X-ray detection
- Lioliou, G.; Gemmell, N. R.; Mazzillo, M.
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Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, Vol. 940
https://doi.org/10.1016/j.nima.2019.06.036
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October 2019 |
Development of high sensitivity 4H–SiC detectors for fission neutron pulse shape measurements
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August 2017 |
High resolution alpha particle detection using 4H–SiC epitaxial layers: Fabrication, characterization, and noise analysis
- Chaudhuri, Sandeep K.; Zavalla, Kelvin J.; Mandal, Krishna C.
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Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, Vol. 728
https://doi.org/10.1016/j.nima.2013.06.076
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November 2013 |
Electric-field dependence of electron drift velocity in 4H–SiC
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September 2016 |
A Forward Current-Voltage-Temperature Method for Extraction of Intrinsic Schottky Barrier Height
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July 2020 |
Improved n-Type 4H-SiC Epitaxial Radiation Detectors by Edge Termination
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December 2015 |
Highly sensitive x-ray detectors in the low-energy range on n-type 4H-SiC epitaxial layers
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July 2012 |
Electrical properties of the titanium acceptor in silicon carbide
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May 1997 |
Metal-semiconductor contacts
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January 1982 |
Electron-Hole Recombination in Germanium
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July 1952 |
Single crystal silicon carbide detector of emitted ions and soft x rays from power laser-generated plasmas
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June 2009 |
Current transport in Schottky‐barrier diodes
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September 1976 |