Van der Waals heterostructure Pt2HgSe3/CrI3 for topological valleytronics

Liu, Zheng; Han, Yulei; Ren, Yafei; Niu, Qian; Qiao, Zhenhua

doi:10.1103/physrevb.104.l121403

Title: Van der Waals heterostructure ${Pt}_{2} {HgSe}_{3} / {CrI}_{3}$ for topological valleytronics

Journal Article · Tue Sep 14 00:00:00 EDT 2021 · Physical Review. B

DOI:https://doi.org/10.1103/physrevb.104.l121403· OSTI ID:1850223

Liu, Zheng ^[1];

^[2]; Ren, Yafei ^[3]; Niu, Qian ^[3];

^[1]

Univ. of Science and Technology of China, Hefei (China). CAS Key Lab. of Strongly-Coupled Quantum Matter Physics, Hefei National Lab. for Physical Sciences at Microscale
Univ. of Science and Technology of China, Hefei (China). CAS Key Lab. of Strongly-Coupled Quantum Matter Physics, Hefei National Lab. for Physical Sciences at Microscale; Fuzhou Univ. (China)
Univ. of Texas, Austin, TX (United States)

We identify a valley-polarized Chern insulator in a van der Waals heterostructure, monolayer Pt₂HgSe₃/monolayer CrI₃, for potential applications with interplay between electric, magnetic, optical, and mechanical effects. The interlayer proximity magnetic coupling nearly closes the band gap of monolayer Pt₂HgSe₃, and the strong intralayer spin-orbit coupling further lifts the valley degeneracy by over 100 meV, leading to positive and negative band gaps at opposite valleys. In the valley with negative gap, the interfacial Rashba spin-orbit coupling opens a topological band gap of 17.8 meV, which is enlarged to 30.8 meV by adding a hexagonal boron nitride (h-BN) layer. We find large orbital magnetization in the Pt₂HgSe₃ layer that is much larger than spin, which can induce a measurable optical Kerr effect. Additionally, the valley polarization and Chern number are coupled to the magnetic order of the nearest-neighbor CrI3 layer, which is switchable by electric, magnetic, and mechanical means in experiments. The presence of h-BN protects the topological phase, allowing the construction of superlattices with valley, spin, and layer degrees of freedom.

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Research Organization:: Univ. of Texas, Austin, TX (United States)

Sponsoring Organization:: USDOE Office of Science (SC), Basic Energy Sciences (BES). Materials Sciences & Engineering Division; National Key Research and Development Program of China; National Natural Science Foundation of China (NSFC); China Postdoctoral Science Foundation

Grant/Contract Number:: FG03-02ER45958; 2017YFB0405703; 11974327; 2020M681998; F-1255

OSTI ID:: 1850223

Journal Information:: Physical Review. B, Vol. 104, Issue 12; ISSN 2469-9950

Publisher:: American Physical Society (APS)Copyright Statement

Country of Publication:: United States

Language:: English

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Title: Van der Waals heterostructure Pt 2 HgSe 3 / CrI 3 for topological valleytronics

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Title: Van der Waals heterostructure ${Pt}_{2} {HgSe}_{3} / {CrI}_{3}$ for topological valleytronics