The Effect of Radiation Damage on the Charge Collection Efficiency of Silicon Avalanche Photodiodes

Zedric, Robert M.; Marianno, Craig M.; Chirayath, Sunil S.; Diawara, Yacouba; Darby, Iain

doi:10.1109/tns.2021.3137476

Title: The Effect of Radiation Damage on the Charge Collection Efficiency of Silicon Avalanche Photodiodes

Journal Article · Wed Dec 22 00:00:00 EST 2021 · IEEE Transactions on Nuclear Science

DOI:https://doi.org/10.1109/tns.2021.3137476· OSTI ID:1846759

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Texas A & M Univ., College Station, TX (United States)
Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States)
Univ. of Glasgow (United Kingdom)

Understanding radiation effects on avalanche photodiodes (APDs) is important because they are used in several applications involving harsh radiation environments. APDs are used as photosensors in applications where speed and detection efficiency are critical. Proton irradiation experiments on a commercial off-the-shelf APD demonstrated that the irradiation flux and applied reverse bias have a strong influence on the severity of radiation effects. This is measured using the ion beam induced charge (IBIC) technique in which charge collection efficiency (CCE) describes the signal response from a device. CCE can degrade substantially due to radiation damage, but recent measurements show that certain combinations of irradiation flux and reverse bias can lead to increases in CCE up to 186% ± 24% for irradiations with 2 MeV protons at a fluence of 6.4 × 10¹¹ cm^–2. This defect-enhanced charge multiplication (DECM) only appeared when the reverse bias during irradiation ranged from 170 to 1830 V out of a maximum operating bias of 2000 V and the proton flux ranged from 9.8 × 10⁷ to 3.4 × 10⁹ cm^–2 s^–1. Furthermore values outside of either range led to losses in CCE. It is expected that DECM should be encountered in other devices, especially those with sufficiently high electric fields to cause impact ionization.

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Research Organization:: Savannah River Site (SRS), Aiken, SC (United States). Savannah River National Lab. (SRNL)

Sponsoring Organization:: USDOE National Nuclear Security Administration (NNSA)

Grant/Contract Number:: 89303321CEM000080

OSTI ID:: 1846759

Report Number(s):: SRNL-STI-2021-00337; TRN: US2303041

Journal Information:: IEEE Transactions on Nuclear Science, Vol. 69, Issue 2; ISSN 0018-9499

Publisher:: IEEECopyright Statement

Country of Publication:: United States

Language:: English

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72 PHYSICS OF ELEMENTARY PARTICLES AND FIELDS
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ion beam induced charge (IBIC) technique

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